Mix-and-match interferometric and optical lithographies for nanoscale structures

Saleem H. Zaidi, S. R J Brueck, T. Hill, R. N. Shagam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Optical lithography (OL) is the manufacturing base for patterning of semiconductor integrated circuits (IC). Fundamental limits on optical imaging at features below 200-nm potentially limit its continued applicability. Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with dense feature resolution to ∼ 50 nm. An important next step is demonstating the capability of applying IL to an existing pattern defined by OL. We report on a mix-and match scheme for writing a critical layer in an electrical linewidth test structure. Two important issues are the accuracy and the overlay of the grids for the two exposure techniques. Moiré techniques are used to evaluate the grid absolute accuracy for IL with expanding spherical wavefronts. For a 1-m distance to the wafer plane, the period variation is less than 5×10 -5 over a 1 cm 2 field leading to a placement error of ±60 nm over the field. This error scales as the inverse square of the distance to the wafer plane and can be reduced to arbitrarily levels. Collimation will eliminate this systematic error to the extent that lens aberrations are compensated. Preliminary experimental results in qualitative agreement with the analysis are presented.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsY Vladimirsky
Pages406-413
Number of pages8
Volume3331
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventEmerging Lithographic Technologies II - Santa Clara, CA, United States
Duration: 23 Feb 199825 Feb 1998

Other

OtherEmerging Lithographic Technologies II
CountryUnited States
CitySanta Clara, CA
Period23/2/9825/2/98

Fingerprint

Lithography
lithography
Photolithography
Systematic errors
Wavefronts
Aberrations
Linewidth
grids
Integrated circuits
wafers
Lenses
Semiconductor materials
Imaging techniques
collimation
systematic errors
integrated circuits
aberration
manufacturing
lenses
Costs

Keywords

  • Interferometric techniques
  • Lithography
  • Moiré alignment
  • Nanoscale structures

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Zaidi, S. H., Brueck, S. R. J., Hill, T., & Shagam, R. N. (1998). Mix-and-match interferometric and optical lithographies for nanoscale structures. In Y. Vladimirsky (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3331, pp. 406-413) https://doi.org/10.1117/12.309575

Mix-and-match interferometric and optical lithographies for nanoscale structures. / Zaidi, Saleem H.; Brueck, S. R J; Hill, T.; Shagam, R. N.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Y Vladimirsky. Vol. 3331 1998. p. 406-413.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zaidi, SH, Brueck, SRJ, Hill, T & Shagam, RN 1998, Mix-and-match interferometric and optical lithographies for nanoscale structures. in Y Vladimirsky (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3331, pp. 406-413, Emerging Lithographic Technologies II, Santa Clara, CA, United States, 23/2/98. https://doi.org/10.1117/12.309575
Zaidi SH, Brueck SRJ, Hill T, Shagam RN. Mix-and-match interferometric and optical lithographies for nanoscale structures. In Vladimirsky Y, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3331. 1998. p. 406-413 https://doi.org/10.1117/12.309575
Zaidi, Saleem H. ; Brueck, S. R J ; Hill, T. ; Shagam, R. N. / Mix-and-match interferometric and optical lithographies for nanoscale structures. Proceedings of SPIE - The International Society for Optical Engineering. editor / Y Vladimirsky. Vol. 3331 1998. pp. 406-413
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