Mechanical and electrical properties of Au-Al and Cu-Al intermetallics layer at wire bonding interface

Tan Chee Wei, Abdul Razak Daud

    Research output: Contribution to journalArticle

    22 Citations (Scopus)

    Abstract

    Mechanical and electrical properties of the Au-Al intermetallics layer were compared to the Cu-Al intermetallics layer. A thermal aging test was used to expedite the formation and growth of the intermetallics layer. Dynamic hardness, surface hardness, and intermetallic thickness of both bonding system was compared. Unencapsulated samples were subjected to a ball shear test while encapsulated samples were electrically tested. Results showed that the Cu-Al intermetallics layer is relatively harder than Au-Al. Both intermetallic thicknesses grow linearly at about 18.0 and 0.07 nm/h, respectively, but the Au-Al intermetallic layer is 20 times thicker than Cu-Al before the aging test. The 1.5-μm growth of Au-Al intermetallic thickness acquired an additional shear force of 160 gf. The threshold value of the intermetallics layer thickness for the Au-Al and Cu-Al bonding system is 3.8 and 0.14 μm, respectively, before it shows degradation in shear force. Electrical resistance for the Au-Al system is higher than the Cu-Al system, especially at higher aging readout points.

    Original languageEnglish
    Pages (from-to)617-620
    Number of pages4
    JournalJournal of Electronic Packaging, Transactions of the ASME
    Volume125
    Issue number4
    DOIs
    Publication statusPublished - Dec 2003

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    Intermetallics
    Electric properties
    Wire
    Mechanical properties
    Aging of materials
    Hardness
    Thermal aging
    Acoustic impedance
    Degradation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Mechanical Engineering

    Cite this

    Mechanical and electrical properties of Au-Al and Cu-Al intermetallics layer at wire bonding interface. / Wei, Tan Chee; Daud, Abdul Razak.

    In: Journal of Electronic Packaging, Transactions of the ASME, Vol. 125, No. 4, 12.2003, p. 617-620.

    Research output: Contribution to journalArticle

    @article{7e31d64527914bba83549df658e24224,
    title = "Mechanical and electrical properties of Au-Al and Cu-Al intermetallics layer at wire bonding interface",
    abstract = "Mechanical and electrical properties of the Au-Al intermetallics layer were compared to the Cu-Al intermetallics layer. A thermal aging test was used to expedite the formation and growth of the intermetallics layer. Dynamic hardness, surface hardness, and intermetallic thickness of both bonding system was compared. Unencapsulated samples were subjected to a ball shear test while encapsulated samples were electrically tested. Results showed that the Cu-Al intermetallics layer is relatively harder than Au-Al. Both intermetallic thicknesses grow linearly at about 18.0 and 0.07 nm/h, respectively, but the Au-Al intermetallic layer is 20 times thicker than Cu-Al before the aging test. The 1.5-μm growth of Au-Al intermetallic thickness acquired an additional shear force of 160 gf. The threshold value of the intermetallics layer thickness for the Au-Al and Cu-Al bonding system is 3.8 and 0.14 μm, respectively, before it shows degradation in shear force. Electrical resistance for the Au-Al system is higher than the Cu-Al system, especially at higher aging readout points.",
    author = "Wei, {Tan Chee} and Daud, {Abdul Razak}",
    year = "2003",
    month = "12",
    doi = "10.1115/1.1604809",
    language = "English",
    volume = "125",
    pages = "617--620",
    journal = "Journal of Electronic Packaging, Transactions of the ASME",
    issn = "1043-7398",
    publisher = "American Society of Mechanical Engineers(ASME)",
    number = "4",

    }

    TY - JOUR

    T1 - Mechanical and electrical properties of Au-Al and Cu-Al intermetallics layer at wire bonding interface

    AU - Wei, Tan Chee

    AU - Daud, Abdul Razak

    PY - 2003/12

    Y1 - 2003/12

    N2 - Mechanical and electrical properties of the Au-Al intermetallics layer were compared to the Cu-Al intermetallics layer. A thermal aging test was used to expedite the formation and growth of the intermetallics layer. Dynamic hardness, surface hardness, and intermetallic thickness of both bonding system was compared. Unencapsulated samples were subjected to a ball shear test while encapsulated samples were electrically tested. Results showed that the Cu-Al intermetallics layer is relatively harder than Au-Al. Both intermetallic thicknesses grow linearly at about 18.0 and 0.07 nm/h, respectively, but the Au-Al intermetallic layer is 20 times thicker than Cu-Al before the aging test. The 1.5-μm growth of Au-Al intermetallic thickness acquired an additional shear force of 160 gf. The threshold value of the intermetallics layer thickness for the Au-Al and Cu-Al bonding system is 3.8 and 0.14 μm, respectively, before it shows degradation in shear force. Electrical resistance for the Au-Al system is higher than the Cu-Al system, especially at higher aging readout points.

    AB - Mechanical and electrical properties of the Au-Al intermetallics layer were compared to the Cu-Al intermetallics layer. A thermal aging test was used to expedite the formation and growth of the intermetallics layer. Dynamic hardness, surface hardness, and intermetallic thickness of both bonding system was compared. Unencapsulated samples were subjected to a ball shear test while encapsulated samples were electrically tested. Results showed that the Cu-Al intermetallics layer is relatively harder than Au-Al. Both intermetallic thicknesses grow linearly at about 18.0 and 0.07 nm/h, respectively, but the Au-Al intermetallic layer is 20 times thicker than Cu-Al before the aging test. The 1.5-μm growth of Au-Al intermetallic thickness acquired an additional shear force of 160 gf. The threshold value of the intermetallics layer thickness for the Au-Al and Cu-Al bonding system is 3.8 and 0.14 μm, respectively, before it shows degradation in shear force. Electrical resistance for the Au-Al system is higher than the Cu-Al system, especially at higher aging readout points.

    UR - http://www.scopus.com/inward/record.url?scp=0347567444&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0347567444&partnerID=8YFLogxK

    U2 - 10.1115/1.1604809

    DO - 10.1115/1.1604809

    M3 - Article

    AN - SCOPUS:0347567444

    VL - 125

    SP - 617

    EP - 620

    JO - Journal of Electronic Packaging, Transactions of the ASME

    JF - Journal of Electronic Packaging, Transactions of the ASME

    SN - 1043-7398

    IS - 4

    ER -