Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer

Md Soyaeb Hasan, Apurba Kumar Saha, Md Rafiqul Islam, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.

Original languageEnglish
Title of host publicationApplied Mechanics and Materials
Pages70-74
Number of pages5
Volume372
DOIs
Publication statusPublished - 2013
Event2013 2nd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2013 - Kuala Lumpur
Duration: 17 May 201318 May 2013

Publication series

NameApplied Mechanics and Materials
Volume372
ISSN (Print)16609336
ISSN (Electronic)16627482

Other

Other2013 2nd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2013
CityKuala Lumpur
Period17/5/1318/5/13

Fingerprint

Epitaxial films
Epitaxial layers
Indium
Phase diagrams
Vapor phase epitaxy
Growth temperature
Phase separation
Flow of gases
Flow rate
Mathematical models
Scanning electron microscopy
Metals
Temperature

Keywords

  • Ingan
  • Mathematical modeling
  • Movpe
  • Phase diagram
  • Phase separation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hasan, M. S., Saha, A. K., Islam, M. R., & Amin, N. (2013). Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer. In Applied Mechanics and Materials (Vol. 372, pp. 70-74). (Applied Mechanics and Materials; Vol. 372). https://doi.org/10.4028/www.scientific.net/AMM.372.70

Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer. / Hasan, Md Soyaeb; Saha, Apurba Kumar; Islam, Md Rafiqul; Amin, Nowshad.

Applied Mechanics and Materials. Vol. 372 2013. p. 70-74 (Applied Mechanics and Materials; Vol. 372).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hasan, MS, Saha, AK, Islam, MR & Amin, N 2013, Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer. in Applied Mechanics and Materials. vol. 372, Applied Mechanics and Materials, vol. 372, pp. 70-74, 2013 2nd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2013, Kuala Lumpur, 17/5/13. https://doi.org/10.4028/www.scientific.net/AMM.372.70
Hasan MS, Saha AK, Islam MR, Amin N. Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer. In Applied Mechanics and Materials. Vol. 372. 2013. p. 70-74. (Applied Mechanics and Materials). https://doi.org/10.4028/www.scientific.net/AMM.372.70
Hasan, Md Soyaeb ; Saha, Apurba Kumar ; Islam, Md Rafiqul ; Amin, Nowshad. / Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer. Applied Mechanics and Materials. Vol. 372 2013. pp. 70-74 (Applied Mechanics and Materials).
@inproceedings{025847ea7bc3411880ded20032853ffc,
title = "Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer",
abstract = "It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.",
keywords = "Ingan, Mathematical modeling, Movpe, Phase diagram, Phase separation",
author = "Hasan, {Md Soyaeb} and Saha, {Apurba Kumar} and Islam, {Md Rafiqul} and Nowshad Amin",
year = "2013",
doi = "10.4028/www.scientific.net/AMM.372.70",
language = "English",
isbn = "9783037857977",
volume = "372",
series = "Applied Mechanics and Materials",
pages = "70--74",
booktitle = "Applied Mechanics and Materials",

}

TY - GEN

T1 - Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1-xN epitaxial layer

AU - Hasan, Md Soyaeb

AU - Saha, Apurba Kumar

AU - Islam, Md Rafiqul

AU - Amin, Nowshad

PY - 2013

Y1 - 2013

N2 - It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.

AB - It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.

KW - Ingan

KW - Mathematical modeling

KW - Movpe

KW - Phase diagram

KW - Phase separation

UR - http://www.scopus.com/inward/record.url?scp=84885793673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885793673&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMM.372.70

DO - 10.4028/www.scientific.net/AMM.372.70

M3 - Conference contribution

SN - 9783037857977

VL - 372

T3 - Applied Mechanics and Materials

SP - 70

EP - 74

BT - Applied Mechanics and Materials

ER -