Magneto-transport studies on La2/3Ba1/3(Mn 1-xAlx)O3 for low field sensing applications

Huda Abdullah, S. A. Halim, K. P. Lim, A. N. Jannah

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The magnetic and transport properties of La2/3Ba 1/3(Mn1-xAlx)O3 (x50.0, 0.1, 0.2, 0.3 and 0.4) compounds, prepared by the solid state reaction, have been investigated. Samples show a metal-insulator transition excluding the sample x=0.0. With increased Al doping, the metal- insulator transition temperature Tp is shifted to lower temperatures. Grain size reduction leads to a larger resistivity and a decrease in Tp. Upon analysing the data using several theoretical models, it was found that the metallic (ferromagnetic) part of the resistivity ρ (below Tp) fits well with the equation ρ=ρ02T2, where ρ0 is due to the importance of grain/domain boundary effects, and a second term ρ2T2 might be attributed to the electron-electron scattering. The microstructure results indicate that the porosity of the samples increased when the concentration increased. The magnetoresistance (MR) is defined as %MR5100×[ρ(H, T)-ρ(0, T)]/ρ(0, T)], where ρ(H, T) and ρ(0, T) are the resistivities at temperature T, with an applied magnetic field H and zero applied magnetic field respectively. All samples show low-field magnetoresistance and high-field magnetoresistance regions. The highest percentage of LFMR at a temperature of 100 K is ∼210% MR/Tesla, measured for the sample x=0.2. For x=0.3, the sample reveals the highest colossal magnetoresistance value among other doped compounds with 27.27% at 100 K.

Original languageEnglish
Pages (from-to)386-390
Number of pages5
JournalMaterials Research Innovations
Volume13
Issue number3
DOIs
Publication statusPublished - Sep 2009

Fingerprint

Magnetoresistance
Metal insulator transition
Colossal magnetoresistance
Magnetic fields
electrical resistivity
Electron scattering
Solid state reactions
insulators
Transport properties
Temperature
Superconducting transition temperature
Magnetic properties
Porosity
Doping (additives)
magnetic fields
metals
Microstructure
Electrons
electron scattering
transport properties

Keywords

  • Low-field magnetoresistanc
  • Metal-insulator transition temperature Tp
  • Resistivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Magneto-transport studies on La2/3Ba1/3(Mn 1-xAlx)O3 for low field sensing applications. / Abdullah, Huda; Halim, S. A.; Lim, K. P.; Jannah, A. N.

In: Materials Research Innovations, Vol. 13, No. 3, 09.2009, p. 386-390.

Research output: Contribution to journalArticle

Abdullah, Huda ; Halim, S. A. ; Lim, K. P. ; Jannah, A. N. / Magneto-transport studies on La2/3Ba1/3(Mn 1-xAlx)O3 for low field sensing applications. In: Materials Research Innovations. 2009 ; Vol. 13, No. 3. pp. 386-390.
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abstract = "The magnetic and transport properties of La2/3Ba 1/3(Mn1-xAlx)O3 (x50.0, 0.1, 0.2, 0.3 and 0.4) compounds, prepared by the solid state reaction, have been investigated. Samples show a metal-insulator transition excluding the sample x=0.0. With increased Al doping, the metal- insulator transition temperature Tp is shifted to lower temperatures. Grain size reduction leads to a larger resistivity and a decrease in Tp. Upon analysing the data using several theoretical models, it was found that the metallic (ferromagnetic) part of the resistivity ρ (below Tp) fits well with the equation ρ=ρ0+ρ2T2, where ρ0 is due to the importance of grain/domain boundary effects, and a second term ρ2T2 might be attributed to the electron-electron scattering. The microstructure results indicate that the porosity of the samples increased when the concentration increased. The magnetoresistance (MR) is defined as {\%}MR5100×[ρ(H, T)-ρ(0, T)]/ρ(0, T)], where ρ(H, T) and ρ(0, T) are the resistivities at temperature T, with an applied magnetic field H and zero applied magnetic field respectively. All samples show low-field magnetoresistance and high-field magnetoresistance regions. The highest percentage of LFMR at a temperature of 100 K is ∼210{\%} MR/Tesla, measured for the sample x=0.2. For x=0.3, the sample reveals the highest colossal magnetoresistance value among other doped compounds with 27.27{\%} at 100 K.",
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N2 - The magnetic and transport properties of La2/3Ba 1/3(Mn1-xAlx)O3 (x50.0, 0.1, 0.2, 0.3 and 0.4) compounds, prepared by the solid state reaction, have been investigated. Samples show a metal-insulator transition excluding the sample x=0.0. With increased Al doping, the metal- insulator transition temperature Tp is shifted to lower temperatures. Grain size reduction leads to a larger resistivity and a decrease in Tp. Upon analysing the data using several theoretical models, it was found that the metallic (ferromagnetic) part of the resistivity ρ (below Tp) fits well with the equation ρ=ρ0+ρ2T2, where ρ0 is due to the importance of grain/domain boundary effects, and a second term ρ2T2 might be attributed to the electron-electron scattering. The microstructure results indicate that the porosity of the samples increased when the concentration increased. The magnetoresistance (MR) is defined as %MR5100×[ρ(H, T)-ρ(0, T)]/ρ(0, T)], where ρ(H, T) and ρ(0, T) are the resistivities at temperature T, with an applied magnetic field H and zero applied magnetic field respectively. All samples show low-field magnetoresistance and high-field magnetoresistance regions. The highest percentage of LFMR at a temperature of 100 K is ∼210% MR/Tesla, measured for the sample x=0.2. For x=0.3, the sample reveals the highest colossal magnetoresistance value among other doped compounds with 27.27% at 100 K.

AB - The magnetic and transport properties of La2/3Ba 1/3(Mn1-xAlx)O3 (x50.0, 0.1, 0.2, 0.3 and 0.4) compounds, prepared by the solid state reaction, have been investigated. Samples show a metal-insulator transition excluding the sample x=0.0. With increased Al doping, the metal- insulator transition temperature Tp is shifted to lower temperatures. Grain size reduction leads to a larger resistivity and a decrease in Tp. Upon analysing the data using several theoretical models, it was found that the metallic (ferromagnetic) part of the resistivity ρ (below Tp) fits well with the equation ρ=ρ0+ρ2T2, where ρ0 is due to the importance of grain/domain boundary effects, and a second term ρ2T2 might be attributed to the electron-electron scattering. The microstructure results indicate that the porosity of the samples increased when the concentration increased. The magnetoresistance (MR) is defined as %MR5100×[ρ(H, T)-ρ(0, T)]/ρ(0, T)], where ρ(H, T) and ρ(0, T) are the resistivities at temperature T, with an applied magnetic field H and zero applied magnetic field respectively. All samples show low-field magnetoresistance and high-field magnetoresistance regions. The highest percentage of LFMR at a temperature of 100 K is ∼210% MR/Tesla, measured for the sample x=0.2. For x=0.3, the sample reveals the highest colossal magnetoresistance value among other doped compounds with 27.27% at 100 K.

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