Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source

M. Alizadeh, B. T. Goh, A. K. Pandey, Chang Fu Dee, S. A. Rahman

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InN thin films were prepared on Si(111) substrate by plasma-assisted reactive evaporation method at low RF power of 100 W and the effect of employing hot filament as a localized ion source (LIS) on the structural, morphological and optical properties of the films was investigated. From the XRD and Raman results it was found that the crystallinity of the films improved as the LIS temperature is increased from 1100 to 1400 °C and after that deteriorated at TLIS= 1500 °C. The XPS showed that InN films with higher quality (less oxygen impurity) can be obtained at the optimum LIS temperature of TLIS= 1400 °C. FESEM images revealed that the uniformity and compactness of the InN samples are highly improved as the LIS temperature is increased from 1100 to 1400 °C. The optical results indicated that the band gap energy of the films is 1.21 eV which is larger than 0.7 eV, possibly due to high carrier concentration and polycrystalline nature of the films, but still desirable for the application in full spectra solar cells.

Original languageEnglish
Pages (from-to)408-415
Number of pages8
JournalMaterials Chemistry and Physics
Volume199
DOIs
Publication statusPublished - 15 Sep 2017

Fingerprint

Ion sources
ion sources
Evaporation
evaporation
Plasmas
Thin films
thin films
void ratio
Temperature
Carrier concentration
temperature
Structural properties
crystallinity
filaments
Solar cells
Energy gap
X ray photoelectron spectroscopy
Optical properties
solar cells
Impurities

Keywords

  • Evaporation
  • InN
  • PL
  • Plasma-assisted deposition
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source. / Alizadeh, M.; Goh, B. T.; Pandey, A. K.; Dee, Chang Fu; Rahman, S. A.

In: Materials Chemistry and Physics, Vol. 199, 15.09.2017, p. 408-415.

Research output: Contribution to journalArticle

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AU - Pandey, A. K.

AU - Dee, Chang Fu

AU - Rahman, S. A.

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AB - InN thin films were prepared on Si(111) substrate by plasma-assisted reactive evaporation method at low RF power of 100 W and the effect of employing hot filament as a localized ion source (LIS) on the structural, morphological and optical properties of the films was investigated. From the XRD and Raman results it was found that the crystallinity of the films improved as the LIS temperature is increased from 1100 to 1400 °C and after that deteriorated at TLIS= 1500 °C. The XPS showed that InN films with higher quality (less oxygen impurity) can be obtained at the optimum LIS temperature of TLIS= 1400 °C. FESEM images revealed that the uniformity and compactness of the InN samples are highly improved as the LIS temperature is increased from 1100 to 1400 °C. The optical results indicated that the band gap energy of the films is 1.21 eV which is larger than 0.7 eV, possibly due to high carrier concentration and polycrystalline nature of the films, but still desirable for the application in full spectra solar cells.

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