Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Yuen Yee Wong, Yu Kong Chen, Jer Shen Maa, Hung Wei Yu, Yung Yi Tu, Chang Fu Dee, Chi Chin Yap, Edward Yi Chang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Ti/Al/Ni/Cu ohmic contact for AlGaN/GaN structure has been fabricated. The Ni layer played an important role in achieving low specific contact resistance (rc), smooth morphology, and excellent edge acuity. With a 50-Å Ni layer, a rc of 1.35 × 10-6 Ω-cm 2 and a root-mean-square roughness of 7.65 nm have been realized. The characterization results indicated that no evidence of Cu diffusion into the semiconductor layers. The formation of Al-Cu and Ti-Cu alloys might have confined the Cu within the ohmic metal. In the absence of gold, the surface roughening caused by Au-Al alloy in conventional Ti/Al/Ni/Au structure was also prevented.

Original languageEnglish
Article number152104
JournalApplied Physics Letters
Volume103
Issue number15
DOIs
Publication statusPublished - 7 Oct 2013

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low resistance
high electron mobility transistors
electric contacts
copper
acuity
contact resistance
roughness
gold
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wong, Y. Y., Chen, Y. K., Maa, J. S., Yu, H. W., Tu, Y. Y., Dee, C. F., ... Yi Chang, E. (2013). Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 103(15), [152104]. https://doi.org/10.1063/1.4824894

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors. / Wong, Yuen Yee; Chen, Yu Kong; Maa, Jer Shen; Yu, Hung Wei; Tu, Yung Yi; Dee, Chang Fu; Yap, Chi Chin; Yi Chang, Edward.

In: Applied Physics Letters, Vol. 103, No. 15, 152104, 07.10.2013.

Research output: Contribution to journalArticle

Wong, Yuen Yee ; Chen, Yu Kong ; Maa, Jer Shen ; Yu, Hung Wei ; Tu, Yung Yi ; Dee, Chang Fu ; Yap, Chi Chin ; Yi Chang, Edward. / Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors. In: Applied Physics Letters. 2013 ; Vol. 103, No. 15.
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AU - Tu, Yung Yi

AU - Dee, Chang Fu

AU - Yap, Chi Chin

AU - Yi Chang, Edward

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