Low-Doping effect on hopping conduction and microstructural in a Bulk Al-Doped La2/3Ba1/3MnO3 system

Huda Abdullah, S. A. Halim

Research output: Contribution to journalArticle

Abstract

Electrical resistivity behaviour of low doping-on La2/3Ba1/3(Mn1-xAlx)O3 compounds, prepared by the solid state reaction, have been investigated below the chargeordering temperature to understand the mechanism of conduction. Low temperature resistivity (ρ) data well fit the relations ρ = ρ0 + ρ2T2, signifying the importance of electron-magnon scattering process ρ2T2. At the high temperature (T > Tp) conductivity data satisfy the variable range hopping (VRH) model. In this regime, the resistivity of samples obeys Mott's T1/4 law, characteristic of VRH. High temperature data indicates the formation of thermally activated small polarons. Microstructural studies had to be related with the mechanism of electron conduction.

Original languageEnglish
Pages (from-to)379-387
Number of pages9
JournalEuropean Journal of Scientific Research
Volume29
Issue number3
Publication statusPublished - 2009

Fingerprint

Conduction
electrical resistivity
Doping (additives)
Resistivity
Temperature
Electron
Electrical Resistivity
electron
temperature
electrons
Electrons
Polarons
Range of data
Conductivity
Electron scattering
electrical resistance
conductivity
Solid state reactions
scattering
Scattering

Keywords

  • Hoping conduction
  • Low-doping
  • Mott's law
  • Resistivity (ρ)
  • Variable range hopping (VRH)

ASJC Scopus subject areas

  • General

Cite this

Low-Doping effect on hopping conduction and microstructural in a Bulk Al-Doped La2/3Ba1/3MnO3 system. / Abdullah, Huda; Halim, S. A.

In: European Journal of Scientific Research, Vol. 29, No. 3, 2009, p. 379-387.

Research output: Contribution to journalArticle

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