Long-wavelength MQW vertical-cavity surface emitting laser

Effects of lattice temperature

P. Susthitha Menon N V Visvanathan, K. Kumarajah, Mahamod Ismail, Burhanuddin Yeop Majlis, S. Shaari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The lattice temperature in a 1.5 μm wavelength InP-based vertical-cavity surface-emiting laser (VCSEL) was varied between 273 K until 353 K using an industrial-based numerical simulator and its effects on the characteristics of the device was analysed. The temperature fluctuation has a direct effect on the gain distribution, causes a peak wavelength shift and is the precursor for various dark current processes within the laser. The device employs InGaAsP multi-quantum wells (MQW) sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The thermal resistance used to model the electrical contacts causes an approximate 13 K temperature rise above the ambient temperature (300 K) at a bias of 3 V and a 50 % increase in the threshold current is observed with temperature increment. Various heat sources elements within the VCSEL device were also analysed upon increment of lattice temperature.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalJournal of Optical Communications
Volume31
Issue number2
Publication statusPublished - 2010

Fingerprint

Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
quantum wells
Wavelength
cavities
wavelengths
Temperature
temperature
Lasers
lasers
causes
Distributed Bragg reflectors
Bragg reflectors
thermal resistance
heat sources
dark current
threshold currents
Dark currents
simulators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Long-wavelength MQW vertical-cavity surface emitting laser : Effects of lattice temperature. / N V Visvanathan, P. Susthitha Menon; Kumarajah, K.; Ismail, Mahamod; Yeop Majlis, Burhanuddin; Shaari, S.

In: Journal of Optical Communications, Vol. 31, No. 2, 2010, p. 81-84.

Research output: Contribution to journalArticle

@article{ec779ccfb4fe4e3eac9120ad1cff1dd3,
title = "Long-wavelength MQW vertical-cavity surface emitting laser: Effects of lattice temperature",
abstract = "The lattice temperature in a 1.5 μm wavelength InP-based vertical-cavity surface-emiting laser (VCSEL) was varied between 273 K until 353 K using an industrial-based numerical simulator and its effects on the characteristics of the device was analysed. The temperature fluctuation has a direct effect on the gain distribution, causes a peak wavelength shift and is the precursor for various dark current processes within the laser. The device employs InGaAsP multi-quantum wells (MQW) sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The thermal resistance used to model the electrical contacts causes an approximate 13 K temperature rise above the ambient temperature (300 K) at a bias of 3 V and a 50 {\%} increase in the threshold current is observed with temperature increment. Various heat sources elements within the VCSEL device were also analysed upon increment of lattice temperature.",
author = "{N V Visvanathan}, {P. Susthitha Menon} and K. Kumarajah and Mahamod Ismail and {Yeop Majlis}, Burhanuddin and S. Shaari",
year = "2010",
language = "English",
volume = "31",
pages = "81--84",
journal = "Journal of Optical Communications",
issn = "0173-4911",
publisher = "Fachverlag Schiele und Sohn GmbH",
number = "2",

}

TY - JOUR

T1 - Long-wavelength MQW vertical-cavity surface emitting laser

T2 - Effects of lattice temperature

AU - N V Visvanathan, P. Susthitha Menon

AU - Kumarajah, K.

AU - Ismail, Mahamod

AU - Yeop Majlis, Burhanuddin

AU - Shaari, S.

PY - 2010

Y1 - 2010

N2 - The lattice temperature in a 1.5 μm wavelength InP-based vertical-cavity surface-emiting laser (VCSEL) was varied between 273 K until 353 K using an industrial-based numerical simulator and its effects on the characteristics of the device was analysed. The temperature fluctuation has a direct effect on the gain distribution, causes a peak wavelength shift and is the precursor for various dark current processes within the laser. The device employs InGaAsP multi-quantum wells (MQW) sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The thermal resistance used to model the electrical contacts causes an approximate 13 K temperature rise above the ambient temperature (300 K) at a bias of 3 V and a 50 % increase in the threshold current is observed with temperature increment. Various heat sources elements within the VCSEL device were also analysed upon increment of lattice temperature.

AB - The lattice temperature in a 1.5 μm wavelength InP-based vertical-cavity surface-emiting laser (VCSEL) was varied between 273 K until 353 K using an industrial-based numerical simulator and its effects on the characteristics of the device was analysed. The temperature fluctuation has a direct effect on the gain distribution, causes a peak wavelength shift and is the precursor for various dark current processes within the laser. The device employs InGaAsP multi-quantum wells (MQW) sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The thermal resistance used to model the electrical contacts causes an approximate 13 K temperature rise above the ambient temperature (300 K) at a bias of 3 V and a 50 % increase in the threshold current is observed with temperature increment. Various heat sources elements within the VCSEL device were also analysed upon increment of lattice temperature.

UR - http://www.scopus.com/inward/record.url?scp=77954745732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954745732&partnerID=8YFLogxK

M3 - Article

VL - 31

SP - 81

EP - 84

JO - Journal of Optical Communications

JF - Journal of Optical Communications

SN - 0173-4911

IS - 2

ER -