Localized interface states and the optical spectra of AlSb/InAs heterostructures

M. J. Shaw, Geri Kibe Gopir, P. R. Briddon, M. Jaros

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The existence of localized states at InSb-like interfaces of AlSb/InAs superlattices is predicted using empirical pseudopotential calculations. These predictions are shown to be in agreement with those of ab initio pseudopotential calculations performed using the local density approximation of density functional theory, demonstrating the ability of the empirical approach to describe the microscopic features of the interface. The frequency dependence of the absorption coefficient is calculated for a series of AlSb/InAs superlattices with differing interface configurations, and the role of the interface localization in determining the optical response is identified.

Original languageEnglish
Pages (from-to)1794-1803
Number of pages10
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
Publication statusPublished - Jul 1998
Externally publishedYes

Fingerprint

Interface states
Superlattices
Heterojunctions
optical spectrum
Local density approximation
pseudopotentials
Density functional theory
superlattices
absorptivity
density functional theory
configurations
predictions
approximation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Localized interface states and the optical spectra of AlSb/InAs heterostructures. / Shaw, M. J.; Gopir, Geri Kibe; Briddon, P. R.; Jaros, M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 1794-1803.

Research output: Contribution to journalArticle

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