Localization effects and band gap of GaAsBi alloys

Abdul Rahman Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P R David, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The structural and optical properties of GaAs1-xBix alloys for x up to 0.108 have been investigated by high resolution X-ray diffraction and photoluminescence (PL). At room temperature (RT), the PL intensity of the GaAs0.97Bi0.03 sample was found to be ~300 times higher than a GaAs control sample grown at the same temperature (400°C). PL measurements carried out at 10K show that when excitation power, Pex was increased from 0.11 to 1140Wcm-2, the PL peak energy blue-shifts by 80meV while the full-width-at-half-maximum reduces from 115 to 63meV. However, the PL peak emission energy becomes independent of the excitation power at RT. The results indicate the presence of localized energy states in the GaAs0.97Bi0.03 sample, which trap carriers at low temperatures and that the majority of the carriers become delocalized at RT. Furthermore, the temperature dependent PL also shows an S-shape behavior, which is a signature of localization effects. A theoretical model, which was derived by solving a rate equation was employed. The model successfully reproduces the observed S-shape behavior and the theory fits well with the experimental data. The RT band gap of GaAs1-xBix for x up to 0.108 has been plotted and compared with the literature.

Original languageEnglish
Pages (from-to)1276-1281
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume251
Issue number6
DOIs
Publication statusPublished - 2014

Fingerprint

Energy gap
Photoluminescence
photoluminescence
room temperature
Temperature
blue shift
excitation
energy
Full width at half maximum
Electron energy levels
Structural properties
signatures
traps
Optical properties
optical properties
temperature
high resolution
X ray diffraction
diffraction
x rays

Keywords

  • Band gap
  • GaAsBi
  • Localization theory
  • Photoluminescence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Localization effects and band gap of GaAsBi alloys. / Mohmad, Abdul Rahman; Bastiman, F.; Hunter, C. J.; Richards, R. D.; Sweeney, S. J.; Ng, J. S.; David, J. P R; Yeop Majlis, Burhanuddin.

In: Physica Status Solidi (B) Basic Research, Vol. 251, No. 6, 2014, p. 1276-1281.

Research output: Contribution to journalArticle

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR & Yeop Majlis, B 2014, 'Localization effects and band gap of GaAsBi alloys', Physica Status Solidi (B) Basic Research, vol. 251, no. 6, pp. 1276-1281. https://doi.org/10.1002/pssb.201350311
Mohmad, Abdul Rahman ; Bastiman, F. ; Hunter, C. J. ; Richards, R. D. ; Sweeney, S. J. ; Ng, J. S. ; David, J. P R ; Yeop Majlis, Burhanuddin. / Localization effects and band gap of GaAsBi alloys. In: Physica Status Solidi (B) Basic Research. 2014 ; Vol. 251, No. 6. pp. 1276-1281.
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