Lithography method for selective area of CNTs growth

Aishah Fauthan, Mohd Nizar Hamidon, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents the processes of fabrication method in the selective area of growth Carbon Nanotubes (CNTs) on the substrate with an Interdigitated (IDE) electrodes pattern using resist AZ1500. The substrate used in this work was Gallium Phosphate with Chromium (0.021μm) and Platinum (0.11μm) as the metal layer. The CNTS was grown in two different temperatures using chemical vapor deposition (CVD) with hydrogen as the process gas and benzene as the hydrocarbon. The most suitable temperature growth for CNTs in this work was found to be 800μC. In this study, CNTs were produced by CVD impregnated with iron nitrate (Fe(NO3)39H2O) solution and Resist AZ1500 as the mask for the selective area grown. Maximum temperature for Resist AZ1500 was at 120μC. Therefore Iron Nitrate was used as the protector to protect the resist to be evaporated. The Resist AZ1500 and the Iron Nitrate were coated in different layer on the substrate using standard lithography method.

Original languageEnglish
Title of host publicationProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages367-370
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi
Duration: 25 Sep 201327 Sep 2013

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CityLangkawi
Period25/9/1327/9/13

Fingerprint

Lithography
Nitrates
Carbon nanotubes
Iron
Chemical vapor deposition
Substrates
Growth temperature
Gallium
Masks
Platinum
Chromium
Benzene
Phosphates
Hydrocarbons
Fabrication
Hydrogen
Temperature
Electrodes
Metals
Gases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fauthan, A., Hamidon, M. N., & Yeop Majlis, B. (2013). Lithography method for selective area of CNTs growth. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics (pp. 367-370). [6706552] https://doi.org/10.1109/RSM.2013.6706552

Lithography method for selective area of CNTs growth. / Fauthan, Aishah; Hamidon, Mohd Nizar; Yeop Majlis, Burhanuddin.

Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 367-370 6706552.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fauthan, A, Hamidon, MN & Yeop Majlis, B 2013, Lithography method for selective area of CNTs growth. in Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics., 6706552, pp. 367-370, 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013, Langkawi, 25/9/13. https://doi.org/10.1109/RSM.2013.6706552
Fauthan A, Hamidon MN, Yeop Majlis B. Lithography method for selective area of CNTs growth. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 367-370. 6706552 https://doi.org/10.1109/RSM.2013.6706552
Fauthan, Aishah ; Hamidon, Mohd Nizar ; Yeop Majlis, Burhanuddin. / Lithography method for selective area of CNTs growth. Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. pp. 367-370
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