Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide

Nurdiani Zamhari, Abang Annuar Ehsan

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement.

Original languageEnglish
Pages (from-to)1414-1420
Number of pages7
JournalOptik
Volume130
DOIs
Publication statusPublished - 1 Feb 2017

Fingerprint

Silicon
Waveguides
insulators
waveguides
cross sections
silicon
output
simulators
Simulators
communication
Wavelength
Communication
wavelengths

Keywords

  • Asymmetrical dimension
  • Large cross-section S-bend rib waveguide
  • Lateral offset
  • S-bend offset
  • Silicon-on-insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide. / Zamhari, Nurdiani; Ehsan, Abang Annuar.

In: Optik, Vol. 130, 01.02.2017, p. 1414-1420.

Research output: Contribution to journalArticle

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