Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application

K. S. Rahman, N. A. Khan, M. N. Imamzai, Md. Akhtaruzzaman, Kamaruzzaman Sopian, Z. A. Alothman, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl2 treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The influence of different annealing times on the structural, topographical and electrical properties of Cu sputtered CdTe thin films were then examined by XRD, AFM and Hall Effect measurement, respectively. XRD patterns reveal that, one CdTe peak corresponding to the (111)cub reflection planes at 2θ=23.8° and another low intensity Cu2Te peak representing (200)hex hexagonal reflection planes at around 2θ=24.8° were found for all the annealing times. Surface roughness and topography were viewed from the AFM images. Noteworthy changes were observed in the films surface roughness due to the different annealing times. The surface roughness values imply rising trend for lower annealing times. Bulk carrier density was in the order of 1018cm-3. The highest carrier concentration of 7.1×1018cm-3 was achieved for the films annealed for 15 min.

Original languageEnglish
Title of host publicationRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479985500
DOIs
Publication statusPublished - 11 Dec 2015
Event10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 - Kuala Terengganu, Malaysia
Duration: 19 Aug 201521 Aug 2015

Other

Other10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015
CountryMalaysia
CityKuala Terengganu
Period19/8/1521/8/15

Fingerprint

Cadmium telluride
cadmium tellurides
Annealing
Thin films
annealing
thin films
surface roughness
Surface roughness
Carrier concentration
atomic force microscopy
vacuum furnaces
Vacuum furnaces
Cadmium Chloride
Hall effect
calcium oxides
Surface topography
Lime
Magnetron sputtering
Sputtering
Structural properties

Keywords

  • AFM
  • annealing time
  • CdTe thin film
  • sputtering
  • XRD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Rahman, K. S., Khan, N. A., Imamzai, M. N., Akhtaruzzaman, M., Sopian, K., Alothman, Z. A., & Amin, N. (2015). Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings [7355006] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2015.7355006

Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application. / Rahman, K. S.; Khan, N. A.; Imamzai, M. N.; Akhtaruzzaman, Md.; Sopian, Kamaruzzaman; Alothman, Z. A.; Amin, Nowshad.

RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7355006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rahman, KS, Khan, NA, Imamzai, MN, Akhtaruzzaman, M, Sopian, K, Alothman, ZA & Amin, N 2015, Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application. in RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings., 7355006, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015, Kuala Terengganu, Malaysia, 19/8/15. https://doi.org/10.1109/RSM.2015.7355006
Rahman KS, Khan NA, Imamzai MN, Akhtaruzzaman M, Sopian K, Alothman ZA et al. Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7355006 https://doi.org/10.1109/RSM.2015.7355006
Rahman, K. S. ; Khan, N. A. ; Imamzai, M. N. ; Akhtaruzzaman, Md. ; Sopian, Kamaruzzaman ; Alothman, Z. A. ; Amin, Nowshad. / Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl2 treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The influence of different annealing times on the structural, topographical and electrical properties of Cu sputtered CdTe thin films were then examined by XRD, AFM and Hall Effect measurement, respectively. XRD patterns reveal that, one CdTe peak corresponding to the (111)cub reflection planes at 2θ=23.8° and another low intensity Cu2Te peak representing (200)hex hexagonal reflection planes at around 2θ=24.8° were found for all the annealing times. Surface roughness and topography were viewed from the AFM images. Noteworthy changes were observed in the films surface roughness due to the different annealing times. The surface roughness values imply rising trend for lower annealing times. Bulk carrier density was in the order of 1018cm-3. The highest carrier concentration of 7.1×1018cm-3 was achieved for the films annealed for 15 min.",
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