Inverted organic solar cells integrated with room temperature solution-processed bismuth sulfide electron selective layer

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2 Citations (Scopus)

Abstract

Conventional electron selective layer (ESL) such as zinc oxide (ZnO) and titanium dioxide (TiO2) usually requires high annealing temperature (>300 °C) to produce high quality thin films. Without high annealing temperature, the solar cell shows poor performance. In addition, a device fabrication process that requires high annealing temperature is also not suitable to apply in flexible substrate. To address this issue, we propose bismuth sulfide (Bi2S3) to replace the conventional ESL. The advantage of using Bi2S3 ESL is it can be synthesized at room temperature using a simple solution process. The power conversion efficiency (PCE) of the optimized device with poly (3-hexylthiophene-2,5-diyl) (P3HT) electron donor and phenyl-C61-butyric acid methyl ester (PCBM) electron acceptor can achieve up to 2.32%, which is comparable to the device based on ZnO and TiO2 using the same absorbing layer. Interestingly, the result shows that Bi2S3 enhanced charge extraction to the FTO cathode but did not contribute to the photocurrent generation. Furthermore, it also acted as an effective electron selective layer by suppressing leakage current and charge carriers recombination of the device. The device with optimum immersion duration (30 min) exhibited almost seven times increase in PCE with respect to that without Bi2S3 ESL. This solution-processed Bi2S3 ESL is considered to be suitable for low-cost flexible optoelectronics in future.

Original languageEnglish
Pages (from-to)1108-1113
Number of pages6
JournalSolar Energy
Volume157
DOIs
Publication statusPublished - 15 Nov 2017

Fingerprint

Bismuth
Electrons
Zinc Oxide
Temperature
Annealing
Zinc oxide
Conversion efficiency
Butyric acid
Butyric Acid
Sulfides
Organic solar cells
bismuth sulfide
Charge carriers
Photocurrents
Leakage currents
Optoelectronic devices
Titanium dioxide
Solar cells
Esters
Cathodes

Keywords

  • Bismuth sulfide
  • Electron selective layer
  • Inverted organic solar cell
  • Room temperature
  • Solution process

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

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title = "Inverted organic solar cells integrated with room temperature solution-processed bismuth sulfide electron selective layer",
abstract = "Conventional electron selective layer (ESL) such as zinc oxide (ZnO) and titanium dioxide (TiO2) usually requires high annealing temperature (>300 °C) to produce high quality thin films. Without high annealing temperature, the solar cell shows poor performance. In addition, a device fabrication process that requires high annealing temperature is also not suitable to apply in flexible substrate. To address this issue, we propose bismuth sulfide (Bi2S3) to replace the conventional ESL. The advantage of using Bi2S3 ESL is it can be synthesized at room temperature using a simple solution process. The power conversion efficiency (PCE) of the optimized device with poly (3-hexylthiophene-2,5-diyl) (P3HT) electron donor and phenyl-C61-butyric acid methyl ester (PCBM) electron acceptor can achieve up to 2.32{\%}, which is comparable to the device based on ZnO and TiO2 using the same absorbing layer. Interestingly, the result shows that Bi2S3 enhanced charge extraction to the FTO cathode but did not contribute to the photocurrent generation. Furthermore, it also acted as an effective electron selective layer by suppressing leakage current and charge carriers recombination of the device. The device with optimum immersion duration (30 min) exhibited almost seven times increase in PCE with respect to that without Bi2S3 ESL. This solution-processed Bi2S3 ESL is considered to be suitable for low-cost flexible optoelectronics in future.",
keywords = "Bismuth sulfide, Electron selective layer, Inverted organic solar cell, Room temperature, Solution process",
author = "Lim, {Eng Liang} and Yap, {Chi Chin} and Jumali, {Mohammad Hafizuddin} and {Mat Teridi}, {Mohd Asri} and Teh, {Chin Hoong}",
year = "2017",
month = "11",
day = "15",
doi = "10.1016/j.solener.2017.08.042",
language = "English",
volume = "157",
pages = "1108--1113",
journal = "Solar Energy",
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T1 - Inverted organic solar cells integrated with room temperature solution-processed bismuth sulfide electron selective layer

AU - Lim, Eng Liang

AU - Yap, Chi Chin

AU - Jumali, Mohammad Hafizuddin

AU - Mat Teridi, Mohd Asri

AU - Teh, Chin Hoong

PY - 2017/11/15

Y1 - 2017/11/15

N2 - Conventional electron selective layer (ESL) such as zinc oxide (ZnO) and titanium dioxide (TiO2) usually requires high annealing temperature (>300 °C) to produce high quality thin films. Without high annealing temperature, the solar cell shows poor performance. In addition, a device fabrication process that requires high annealing temperature is also not suitable to apply in flexible substrate. To address this issue, we propose bismuth sulfide (Bi2S3) to replace the conventional ESL. The advantage of using Bi2S3 ESL is it can be synthesized at room temperature using a simple solution process. The power conversion efficiency (PCE) of the optimized device with poly (3-hexylthiophene-2,5-diyl) (P3HT) electron donor and phenyl-C61-butyric acid methyl ester (PCBM) electron acceptor can achieve up to 2.32%, which is comparable to the device based on ZnO and TiO2 using the same absorbing layer. Interestingly, the result shows that Bi2S3 enhanced charge extraction to the FTO cathode but did not contribute to the photocurrent generation. Furthermore, it also acted as an effective electron selective layer by suppressing leakage current and charge carriers recombination of the device. The device with optimum immersion duration (30 min) exhibited almost seven times increase in PCE with respect to that without Bi2S3 ESL. This solution-processed Bi2S3 ESL is considered to be suitable for low-cost flexible optoelectronics in future.

AB - Conventional electron selective layer (ESL) such as zinc oxide (ZnO) and titanium dioxide (TiO2) usually requires high annealing temperature (>300 °C) to produce high quality thin films. Without high annealing temperature, the solar cell shows poor performance. In addition, a device fabrication process that requires high annealing temperature is also not suitable to apply in flexible substrate. To address this issue, we propose bismuth sulfide (Bi2S3) to replace the conventional ESL. The advantage of using Bi2S3 ESL is it can be synthesized at room temperature using a simple solution process. The power conversion efficiency (PCE) of the optimized device with poly (3-hexylthiophene-2,5-diyl) (P3HT) electron donor and phenyl-C61-butyric acid methyl ester (PCBM) electron acceptor can achieve up to 2.32%, which is comparable to the device based on ZnO and TiO2 using the same absorbing layer. Interestingly, the result shows that Bi2S3 enhanced charge extraction to the FTO cathode but did not contribute to the photocurrent generation. Furthermore, it also acted as an effective electron selective layer by suppressing leakage current and charge carriers recombination of the device. The device with optimum immersion duration (30 min) exhibited almost seven times increase in PCE with respect to that without Bi2S3 ESL. This solution-processed Bi2S3 ESL is considered to be suitable for low-cost flexible optoelectronics in future.

KW - Bismuth sulfide

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KW - Inverted organic solar cell

KW - Room temperature

KW - Solution process

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