Introduction of Sb in CDTE and its effect on CDTE solar cells

Hehong Zhao, T. M. Razykov, D. Hodges, Alvi Farah, C. S. Ferekides, D. Morel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One approach to further increase the performance of CdTe cells is by increasing their open-circuit voltage from its current state-of-the-art levels of 830-850 mV, which could be accomplished by increasing the net doping concentration in CdTe. Antimony (Sb) is a group V element and suitable p-type dopant for CdTe because of its low ionization energy, low diffusion coefficient, and relative ease of incorporation into CdTe. In this paper, the effects of Sb doping in CdS/CdTe solar cells have been studied. Antimony was introduced in CdTe by diffusion. The effects of the diffusion parameters, and the excess Sb on the CdTe surface were investigated. The best results were obtained when the Sb heat treatment was carried out at 430°C for 25 minutes. The results indicate that Sb incorporation into CdTe can yield higher net hole carrier concentration, however, the Voc values obtained to-date remain in the 800-830 mV range.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA
Duration: 11 May 200816 May 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CitySan Diego, CA
Period11/5/0816/5/08

Fingerprint

Solar cells
Doping (additives)
Antimony
Ionization potential
Open circuit voltage
Chemical elements
Carrier concentration
Heat treatment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Zhao, H., Razykov, T. M., Hodges, D., Farah, A., Ferekides, C. S., & Morel, D. (2008). Introduction of Sb in CDTE and its effect on CDTE solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922554] https://doi.org/10.1109/PVSC.2008.4922554

Introduction of Sb in CDTE and its effect on CDTE solar cells. / Zhao, Hehong; Razykov, T. M.; Hodges, D.; Farah, Alvi; Ferekides, C. S.; Morel, D.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922554.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, H, Razykov, TM, Hodges, D, Farah, A, Ferekides, CS & Morel, D 2008, Introduction of Sb in CDTE and its effect on CDTE solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922554, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, 11/5/08. https://doi.org/10.1109/PVSC.2008.4922554
Zhao H, Razykov TM, Hodges D, Farah A, Ferekides CS, Morel D. Introduction of Sb in CDTE and its effect on CDTE solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922554 https://doi.org/10.1109/PVSC.2008.4922554
Zhao, Hehong ; Razykov, T. M. ; Hodges, D. ; Farah, Alvi ; Ferekides, C. S. ; Morel, D. / Introduction of Sb in CDTE and its effect on CDTE solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
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