Intrinsic point defects in CdTe, ZnTe, and CdSe films of the variable composition obtained by the chemical molecular beam deposition

T. M. Razykov, N. F. Khusainova

Research output: Contribution to journalArticle

Abstract

The results of the study of the excess metallic and chalcogen component effect on the growth processes and electrophysical properties of the CdTe, ZnTe, and CdSe films grown by the chemical beam deposition method in the flowing H2 and Ar from the Cd, Zn, Te, and Se elemental sources are given. The effect of the ratio of the molecular beam intensities on the resistivity of the grown films is found. The type and activation energy of the intrinsic point defects responsible for the change in the film resistivity are determined.

Original languageEnglish
Pages (from-to)56-61
Number of pages6
JournalApplied Solar Energy (English translation of Geliotekhnika)
Volume32
Issue number2
Publication statusPublished - 1996
Externally publishedYes

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Molecular beams
Point defects
Chemical analysis
Activation energy

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment

Cite this

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