Interplay between variable direct current sputtering deposition process parameters and properties of ZnO

Ga thin films

Mohammad Tanvirul Ferdaous, Seyed Ahmad Shahahmadi, Megat Mohd Izhar Sapeli, Puvaneswaran Chelvanathan, Md. Akhtaruzzaman, Sieh Kiong Tiong, Nowshad Amin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Gallium-doped zinc oxide (GZO) is a potential transparent conductive oxide material suitable for modern photovoltaics among other applications. In this study, GZO thin films were deposited by a confocal direct current sputtering system to investigate the effects of various deposition parameters such as power (60 and 100 W), substrate temperature (50, 100, 150 and 200 °C) and sample location (3 spots) on optoelectronic properties of GZO films. In this regard, X-ray diffraction, ultraviolet-visible-infrared spectroscopy and Hall measurements were used primarily and the relevant analysis was presented in detail. It was found that the low power (60 W) deposition produces more superior optoelectronic properties than the high power (100 W) deposition yielding resistivity of 1.9 × 10−3 Ω·cm and over 89% average transmittance in the visible spectrum with the considerable improved blue response. The substrate temperature was found to improve optoelectronic properties and over 43% enhancement in the resistivity was achieved at the optimum temperature of 150 °C. In both aforesaid cases, improvement in the electrical conductivity was linked to the grain growth and the increase in free carriers. Effect of these two deposition parameters influenced the scale of optoelectronic uniformity, which was analyzed in three different spots. Finally, the adverse effect of spatial optoelectronic non-uniformity due to the high power deposition was observed.

Original languageEnglish
Pages (from-to)538-545
Number of pages8
JournalThin Solid Films
Volume660
DOIs
Publication statusPublished - 30 Aug 2018

Fingerprint

Optoelectronic devices
Sputtering
Zinc Oxide
sputtering
direct current
Gallium
Thin films
Zinc oxide
zinc oxides
gallium
thin films
electrical resistivity
Oxide films
Substrates
visible spectrum
Grain growth
nonuniformity
Temperature
Oxides
temperature

Keywords

  • Gallium-doped zinc oxide
  • Optoelectronic properties
  • Spatial variation
  • Sputtering deposition
  • Thin films
  • Transparent conductive oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Interplay between variable direct current sputtering deposition process parameters and properties of ZnO : Ga thin films. / Ferdaous, Mohammad Tanvirul; Shahahmadi, Seyed Ahmad; Sapeli, Megat Mohd Izhar; Chelvanathan, Puvaneswaran; Akhtaruzzaman, Md.; Tiong, Sieh Kiong; Amin, Nowshad.

In: Thin Solid Films, Vol. 660, 30.08.2018, p. 538-545.

Research output: Contribution to journalArticle

Ferdaous, Mohammad Tanvirul ; Shahahmadi, Seyed Ahmad ; Sapeli, Megat Mohd Izhar ; Chelvanathan, Puvaneswaran ; Akhtaruzzaman, Md. ; Tiong, Sieh Kiong ; Amin, Nowshad. / Interplay between variable direct current sputtering deposition process parameters and properties of ZnO : Ga thin films. In: Thin Solid Films. 2018 ; Vol. 660. pp. 538-545.
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