Interferometric lithography of sub-micrometer sparse hole arrays for field-emission display applications

Xiaolan Chen, Saleem H. Zaidi, S. R J Brueck, Daniel J. Devine

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Interferometric lithography, the use of interactions between coherent laser beams to define sub-wavelength patterns, is well adapted to the periodic nature of field-emitter structures. Techniques to fabricate sparse (hole diameter to pitch ratio of 1:3 or larger) emitter arrays to improve reliability and lifetime are presented. These include: multiple exposures at two different pitches; integration of interferometric and optical imaging lithography; and various multiple beam techniques that both provide a sparse array and result in a two dimensional pattern in a single exposure. Moiré alignment techniques are demonstrated to provide a simple process for aligning multiple levels. Manufacturing related issues such as process latitude and photoresist profiles and their suitability for subsequent processing are also discussed. Exposure-dose process control using latent image monitoring is demonstrated.

Original languageEnglish
Pages (from-to)3339-3349
Number of pages11
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number5
Publication statusPublished - Sep 1996
Externally publishedYes

Fingerprint

Field emission displays
Lithography
micrometers
field emission
lithography
emitters
Photoresists
Process control
Laser beams
Imaging techniques
photoresists
Wavelength
Monitoring
manufacturing
Processing
alignment
laser beams
life (durability)
dosage
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Interferometric lithography of sub-micrometer sparse hole arrays for field-emission display applications. / Chen, Xiaolan; Zaidi, Saleem H.; Brueck, S. R J; Devine, Daniel J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 14, No. 5, 09.1996, p. 3339-3349.

Research output: Contribution to journalArticle

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