Interferometric lithography - From periodic arrays to arbitrary patterns

S. R J Brueck, Saleem H. Zaidi, X. Chen, Z. Zhang

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-nm Ar-ion or 355-nm tripled YAG lasers) dense (1:1 line:space ratio) periodic structures at 0.125-μm have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 nm (dense patterns) at I-line and 65 nm at a 193 nm exposure wavelength.

Original languageEnglish
Pages (from-to)145-148
Number of pages4
JournalMicroelectronic Engineering
Volume41-42
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Lithography
lithography
Wavelength
Lasers
Periodic structures
Photolithography
Ions
Imaging techniques
wavelengths
YAG lasers
routes
lasers
ions

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Interferometric lithography - From periodic arrays to arbitrary patterns. / Brueck, S. R J; Zaidi, Saleem H.; Chen, X.; Zhang, Z.

In: Microelectronic Engineering, Vol. 41-42, 1998, p. 145-148.

Research output: Contribution to journalArticle

Brueck, S. R J ; Zaidi, Saleem H. ; Chen, X. ; Zhang, Z. / Interferometric lithography - From periodic arrays to arbitrary patterns. In: Microelectronic Engineering. 1998 ; Vol. 41-42. pp. 145-148.
@article{ff23c7f6f44a49dcad372dbccfa10a65,
title = "Interferometric lithography - From periodic arrays to arbitrary patterns",
abstract = "Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-nm Ar-ion or 355-nm tripled YAG lasers) dense (1:1 line:space ratio) periodic structures at 0.125-μm have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 nm (dense patterns) at I-line and 65 nm at a 193 nm exposure wavelength.",
author = "Brueck, {S. R J} and Zaidi, {Saleem H.} and X. Chen and Z. Zhang",
year = "1998",
language = "English",
volume = "41-42",
pages = "145--148",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Interferometric lithography - From periodic arrays to arbitrary patterns

AU - Brueck, S. R J

AU - Zaidi, Saleem H.

AU - Chen, X.

AU - Zhang, Z.

PY - 1998

Y1 - 1998

N2 - Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-nm Ar-ion or 355-nm tripled YAG lasers) dense (1:1 line:space ratio) periodic structures at 0.125-μm have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 nm (dense patterns) at I-line and 65 nm at a 193 nm exposure wavelength.

AB - Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-nm Ar-ion or 355-nm tripled YAG lasers) dense (1:1 line:space ratio) periodic structures at 0.125-μm have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 nm (dense patterns) at I-line and 65 nm at a 193 nm exposure wavelength.

UR - http://www.scopus.com/inward/record.url?scp=12844282963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844282963&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:12844282963

VL - 41-42

SP - 145

EP - 148

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -