Interfacial X-ray photospectrometry study of In0.53Ga 0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

Mohd Farhanulhakim Mohd Razip Wee, A. Dehzangi, N. Wichmann, S. Bollaert, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this reported work, comparison is made of a passivation treatment of a 3-4 compound semiconductor using ammonia and ammonium sulphide solution. The treatment is applied on In0.53Ga0.47As which is chosen for its high mobility especially in high electron mobility transistors. The samples were treated with various parameters such as precursor, vacuum condition and different chemical solutions. Then, samples were deposited with the high k-dielectric Al2O3 (4 nm thickness) using the atomic layer deposition technique. Five different passivation treatments were used to give proper comparison. Native oxide elements and contaminants were inspected at the interface of the oxide layer and the substrate using X-ray photospectrometry in different angles (25° and 70°). The results indicate the effectiveness of some treatments to eliminate the oxide of gallium and arsenic with a slight presence of indium oxide.

Original languageEnglish
Pages (from-to)836-840
Number of pages5
JournalMicro and Nano Letters
Volume8
Issue number11
DOIs
Publication statusPublished - 2013

Fingerprint

MOSFET devices
Passivation
metal oxide semiconductors
Oxides
passivity
field effect transistors
X rays
Atomic layer deposition
Arsenic
High electron mobility transistors
Ammonia
oxides
x rays
Vacuum
Impurities
Semiconductor materials
Gallium
Substrates
atomic layer epitaxy
high electron mobility transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Bioengineering
  • Biomedical Engineering

Cite this

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AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Dehzangi, A.

AU - Wichmann, N.

AU - Bollaert, S.

AU - Yeop Majlis, Burhanuddin

PY - 2013

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