InP-based multi-quantum-well mole fraction variation effects on a double wafer-fused GaAs/InP LW-VCSEL

Research output: Contribution to journalArticle

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Abstract

We analyze the effects of the mole fraction variation of III-V heterostructures employed as the active region in an InP-based multi-quantum-well (MQW), long-wavelength vertical-cavity surface-emitting laser (LW-VCSEL). The VCSEL model which utilizes an air-post design for electrical current confinement is equipped with GaAs/AlGaAs and GaAs/AlAs top and bottom distributed Bragg reflectors(DBR) mirrors respectively. The changes in the quantum well band-gap energy is evaluated against the laser performance in terms of its threshold current, gain, lasing wavelength and emission power by means of an industrial-based numerical simulator. The simulated device achieved lasing powers up to 4.9 mW with modal gain of 25 cm -1, lasing wavelength of 1.56 μm and threshold current <0.8 mA for In 1-xGa xAs yP 1-y quantum well (QW) and quantum well barrier (QWB) mole fraction of x QW = 0.24, y QW = 0.82, x QWB = 0.52 and y QWB = 0.82. Results from this work is beneficial for optical design engineers to determine the appropriate material to be used in the active region of a LW-VCSEL.

Original languageEnglish
Pages (from-to)5883-5894
Number of pages12
JournalScientific Research and Essays
Volume6
Issue number28
DOIs
Publication statusPublished - Nov 2011

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Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
lasers
wavelengths
Lasers
quantum wells
wafers
Wavelength
cavities
lasing
electric current
Air
threshold currents
engineers
Equipment and Supplies
Distributed Bragg reflectors
air
Optical design
gallium arsenide

Keywords

  • InGaAsP
  • LW-VCSEL
  • Mole fraction
  • Multi-quantum-well
  • Wafer-fused

ASJC Scopus subject areas

  • Agricultural and Biological Sciences(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Medicine(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

InP-based multi-quantum-well mole fraction variation effects on a double wafer-fused GaAs/InP LW-VCSEL. / N V Visvanathan, P. Susthitha Menon; Shaari, Sahbudin.

In: Scientific Research and Essays, Vol. 6, No. 28, 11.2011, p. 5883-5894.

Research output: Contribution to journalArticle

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