InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate

Hung Wei Yu, Chen Chen Chung, Chin Te Wang, Hong Quan Nguyen, Binh Tinh Tran, Kung Liang Lin, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J peak) at higher concentration ratios (185°) than the solar cells with P ++-GaAs/N ++-InGaP TDs grown on 6° off GaAs substrates. Furthermore, the cell design with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics.

Original languageEnglish
Article number080208
JournalJapanese Journal of Applied Physics
Volume51
Issue number8 PART 1
DOIs
Publication statusPublished - Aug 2012

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Tunnel diodes
tunnel diodes
aluminum gallium arsenides
Solar cells
solar cells
Substrates
Epitaxial layers
Current voltage characteristics
Quantum efficiency
quantum efficiency
Current density
current density
electric potential
cells

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yu, H. W., Chung, C. C., Wang, C. T., Nguyen, H. Q., Tran, B. T., Lin, K. L., ... Chang, E. Y. (2012). InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate. Japanese Journal of Applied Physics, 51(8 PART 1), [080208]. https://doi.org/10.1143/JJAP.51.080208

InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate. / Yu, Hung Wei; Chung, Chen Chen; Wang, Chin Te; Nguyen, Hong Quan; Tran, Binh Tinh; Lin, Kung Liang; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Chang, Edward Yi.

In: Japanese Journal of Applied Physics, Vol. 51, No. 8 PART 1, 080208, 08.2012.

Research output: Contribution to journalArticle

Yu, Hung Wei ; Chung, Chen Chen ; Wang, Chin Te ; Nguyen, Hong Quan ; Tran, Binh Tinh ; Lin, Kung Liang ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin ; Chang, Edward Yi. / InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 8 PART 1.
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abstract = "InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J peak) at higher concentration ratios (185°) than the solar cells with P ++-GaAs/N ++-InGaP TDs grown on 6° off GaAs substrates. Furthermore, the cell design with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics.",
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AU - Nguyen, Hong Quan

AU - Tran, Binh Tinh

AU - Lin, Kung Liang

AU - Dee, Chang Fu

AU - Yeop Majlis, Burhanuddin

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