Influence of tetrabutylammonium hexafluorophosphate (TBAPF6) doping level on the performance of organic light emitting diodes based on PVK

PBD blend films

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17 Citations (Scopus)

Abstract

The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF6) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF6/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF6 doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF6 (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface.

Original languageEnglish
Pages (from-to)722-726
Number of pages5
JournalCurrent Applied Physics
Volume9
Issue number4
DOIs
Publication statusPublished - Jul 2009

Fingerprint

Organic light emitting diodes (OLED)
light emitting diodes
Aluminum
Threshold voltage
Doping (additives)
threshold voltage
injection
Electric potential
electric potential
Tin oxides
aluminum
indium oxides
Indium
tin oxides
Cathodes
cathodes
Electrons
Energy barriers
low currents
Anodes

Keywords

  • Doping level
  • Organic light emitting diodes
  • Organic salt
  • Poly(9-vinylcarbazole)
  • Tetrabutylammonium hexafluorophosphate

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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title = "Influence of tetrabutylammonium hexafluorophosphate (TBAPF6) doping level on the performance of organic light emitting diodes based on PVK: PBD blend films",
abstract = "The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF6) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF6/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF6 doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF6 (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface.",
keywords = "Doping level, Organic light emitting diodes, Organic salt, Poly(9-vinylcarbazole), Tetrabutylammonium hexafluorophosphate",
author = "Yap, {Chi Chin} and Muhammad Yahaya and {Mat Salleh}, Muhamad",
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T1 - Influence of tetrabutylammonium hexafluorophosphate (TBAPF6) doping level on the performance of organic light emitting diodes based on PVK

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N2 - The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF6) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF6/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF6 doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF6 (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface.

AB - The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF6) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF6/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF6 doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF6 (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface.

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