Influence of radio frequency power on thermal diffusivity of plasma enhanced chemical vapor deposition-grown hydrogenated amorphous carbon thin-films

Yun Young Kim, Hasan Adli Alwi, Rozidawati Awang, Sridhar Krishnaswamy

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5 Citations (Scopus)

Abstract

Thermal diffusivity () of hydrogenated amorphous carbon (a-C:H) thin-films was characterized using the picosecond thermoreflectance measurement technique in the present study. The samples were fabricated in a plasma enhanced chemical vapor deposition system with varying radio frequency (RF) discharge powers from 15 to 70 W. Chemical bonding properties of the a-C:H films were determined from the Fourier transform infrared spectra and Raman spectroscopy. Results show that is enhanced from 0.07 to 0.20 mm2 s-1 as the RF power increases. It attributes to the dehydrogenation of film resulting from the bombardment of high-energy ion species that breaks C-H bonds at the lower power regime. Particularly at the highest RF power, however, the increase of is more influenced by the restructuring of bonding configuration associated with the breaking up of sp2 clusters into smaller ones.

Original languageEnglish
Article number113503
JournalJournal of Applied Physics
Volume109
Issue number11
DOIs
Publication statusPublished - 1 Jun 2011

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thermal diffusivity
radio frequencies
vapor deposition
radio frequency discharge
carbon
dehydrogenation
thin films
bombardment
infrared spectra
Raman spectroscopy
configurations
spectroscopy
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Influence of radio frequency power on thermal diffusivity of plasma enhanced chemical vapor deposition-grown hydrogenated amorphous carbon thin-films",
abstract = "Thermal diffusivity () of hydrogenated amorphous carbon (a-C:H) thin-films was characterized using the picosecond thermoreflectance measurement technique in the present study. The samples were fabricated in a plasma enhanced chemical vapor deposition system with varying radio frequency (RF) discharge powers from 15 to 70 W. Chemical bonding properties of the a-C:H films were determined from the Fourier transform infrared spectra and Raman spectroscopy. Results show that is enhanced from 0.07 to 0.20 mm2 s-1 as the RF power increases. It attributes to the dehydrogenation of film resulting from the bombardment of high-energy ion species that breaks C-H bonds at the lower power regime. Particularly at the highest RF power, however, the increase of is more influenced by the restructuring of bonding configuration associated with the breaking up of sp2 clusters into smaller ones.",
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T1 - Influence of radio frequency power on thermal diffusivity of plasma enhanced chemical vapor deposition-grown hydrogenated amorphous carbon thin-films

AU - Young Kim, Yun

AU - Alwi, Hasan Adli

AU - Awang, Rozidawati

AU - Krishnaswamy, Sridhar

PY - 2011/6/1

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AB - Thermal diffusivity () of hydrogenated amorphous carbon (a-C:H) thin-films was characterized using the picosecond thermoreflectance measurement technique in the present study. The samples were fabricated in a plasma enhanced chemical vapor deposition system with varying radio frequency (RF) discharge powers from 15 to 70 W. Chemical bonding properties of the a-C:H films were determined from the Fourier transform infrared spectra and Raman spectroscopy. Results show that is enhanced from 0.07 to 0.20 mm2 s-1 as the RF power increases. It attributes to the dehydrogenation of film resulting from the bombardment of high-energy ion species that breaks C-H bonds at the lower power regime. Particularly at the highest RF power, however, the increase of is more influenced by the restructuring of bonding configuration associated with the breaking up of sp2 clusters into smaller ones.

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