Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method

L. N. Lau, Noor Baa`Yah Ibrahim, H. Baqiah

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18 Citations (Scopus)

Abstract

This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In<inf>2</inf>O<inf>3</inf>) thin film. In<inf>2</inf>O<inf>3</inf> is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO<inf>3</inf>)·H<inf>2</inf>O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm<sup>2</sup> V<sup>-1</sup> S<sup>-1</sup> and carrier concentration of 4.27 × 10<sup>17</sup> cm<sup>-3</sup> was observed for the indium oxide thin film prepared at 0.30 M.

Original languageEnglish
Pages (from-to)355-359
Number of pages5
JournalApplied Surface Science
Volume345
DOIs
Publication statusPublished - 2015

Fingerprint

Indium
Sol-gel process
Oxide films
Structural properties
Electric properties
Optical properties
Thin films
Film thickness
Oxides
Coating techniques
Ultraviolet visible spectroscopy
Hall effect
Diffractometers
Spin coating
Field emission
Optoelectronic devices
Transparency
Carrier concentration
Hydrates
Energy gap

Keywords

  • In<inf>2</inf>O<inf>3</inf>
  • Molarity
  • Spin coating technique

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

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title = "Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method",
abstract = "This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94{\%}. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.",
keywords = "In<inf>2</inf>O<inf>3</inf>, Molarity, Spin coating technique",
author = "Lau, {L. N.} and Ibrahim, {Noor Baa`Yah} and H. Baqiah",
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AU - Lau, L. N.

AU - Ibrahim, Noor Baa`Yah

AU - Baqiah, H.

PY - 2015

Y1 - 2015

N2 - This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

AB - This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

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