Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs

Hai Dang Trinh, Yue Chin Lin, Edward Yi Chang, Hong Quan Nguyen, Shin Yuan Wang, Yuen Yee Wong, Binh Tinh Tran, Quang Ho Luc, Chi Lang Nguyen, Chang Fu Dee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300oC and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300oC the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages747-749
Number of pages3
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Electric properties
Annealing
Capacitors
Interdiffusion (solids)
Degradation
Metals
Temperature
Hysteresis
Capacitance
Oxide semiconductors
Hot Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Trinh, H. D., Lin, Y. C., Chang, E. Y., Nguyen, H. Q., Wang, S. Y., Wong, Y. Y., ... Dee, C. F. (2012). Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 747-749). [6417251] https://doi.org/10.1109/SMElec.2012.6417251

Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. / Trinh, Hai Dang; Lin, Yue Chin; Chang, Edward Yi; Nguyen, Hong Quan; Wang, Shin Yuan; Wong, Yuen Yee; Tran, Binh Tinh; Luc, Quang Ho; Nguyen, Chi Lang; Dee, Chang Fu.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 747-749 6417251.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Trinh, HD, Lin, YC, Chang, EY, Nguyen, HQ, Wang, SY, Wong, YY, Tran, BT, Luc, QH, Nguyen, CL & Dee, CF 2012, Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417251, pp. 747-749, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417251
Trinh HD, Lin YC, Chang EY, Nguyen HQ, Wang SY, Wong YY et al. Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 747-749. 6417251 https://doi.org/10.1109/SMElec.2012.6417251
Trinh, Hai Dang ; Lin, Yue Chin ; Chang, Edward Yi ; Nguyen, Hong Quan ; Wang, Shin Yuan ; Wong, Yuen Yee ; Tran, Binh Tinh ; Luc, Quang Ho ; Nguyen, Chi Lang ; Dee, Chang Fu. / Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 747-749
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