Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films

Huda Abdullah, M. N. Norazia, S. Shaari, Mandeep Singh Jit Singh

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number24 SUPPL.
DOIs
Publication statusPublished - 1 Oct 2010

Fingerprint

Annealing
Thin films
Crystallization
annealing
thin films
crystallization
Temperature
Optical properties
temperature
optical properties
Quartz
peeling
Peeling
Sol-gel process
Surface morphology
Photoluminescence
quartz
gels
photoluminescence
atmospheres

Keywords

  • Indium
  • Sol-gel
  • Thin film
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films. / Abdullah, Huda; Norazia, M. N.; Shaari, S.; Jit Singh, Mandeep Singh.

In: Thin Solid Films, Vol. 518, No. 24 SUPPL., 01.10.2010.

Research output: Contribution to journalArticle

@article{aa6242b2157346949153a79cb2d175d8,
title = "Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films",
abstract = "Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.",
keywords = "Indium, Sol-gel, Thin film, ZnO",
author = "Huda Abdullah and Norazia, {M. N.} and S. Shaari and {Jit Singh}, {Mandeep Singh}",
year = "2010",
month = "10",
day = "1",
doi = "10.1016/j.tsf.2010.03.087",
language = "English",
volume = "518",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "24 SUPPL.",

}

TY - JOUR

T1 - Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films

AU - Abdullah, Huda

AU - Norazia, M. N.

AU - Shaari, S.

AU - Jit Singh, Mandeep Singh

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.

AB - Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.

KW - Indium

KW - Sol-gel

KW - Thin film

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=77957699598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957699598&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.03.087

DO - 10.1016/j.tsf.2010.03.087

M3 - Article

AN - SCOPUS:77957699598

VL - 518

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 24 SUPPL.

ER -