Abstract
Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.
| Original language | English |
|---|---|
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 24 SUPPL. |
| DOIs | |
| Publication status | Published - 1 Oct 2010 |
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Keywords
- Indium
- Sol-gel
- Thin film
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films. / Abdullah, Huda; Norazia, M. N.; Shaari, S.; Jit Singh, Mandeep Singh.
In: Thin Solid Films, Vol. 518, No. 24 SUPPL., 01.10.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of post-annealing temperature on the properties exhibited by nanostructured in doped ZnO thin films
AU - Abdullah, Huda
AU - Norazia, M. N.
AU - Shaari, S.
AU - Jit Singh, Mandeep Singh
PY - 2010/10/1
Y1 - 2010/10/1
N2 - Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.
AB - Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol-gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.
KW - Indium
KW - Sol-gel
KW - Thin film
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=77957699598&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957699598&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.03.087
DO - 10.1016/j.tsf.2010.03.087
M3 - Article
AN - SCOPUS:77957699598
VL - 518
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 24 SUPPL.
ER -