Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

N. Atan, Ibrahim Ahmad, Burhanuddin Yeop Majlis, M. F. Azle

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method's practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source-drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi's signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was-0.291339.

Original languageEnglish
Article number01019
JournalMATEC Web of Conferences
Volume78
DOIs
Publication statusPublished - 7 Oct 2016

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Threshold voltage
Ion implantation
Transistors
Taguchi methods
Gate dielectrics
Signal to noise ratio
Fabrication
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS. / Atan, N.; Ahmad, Ibrahim; Yeop Majlis, Burhanuddin; Azle, M. F.

In: MATEC Web of Conferences, Vol. 78, 01019, 07.10.2016.

Research output: Contribution to journalArticle

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