Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation

N. A. Khan, K. S. Rahman, T. H. Chowdhury, Kamaruzzaman Sopian, A. M. Ali, M. M. Alam, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UVVis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the 'Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, 'T1' and 'T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.

Original languageEnglish
Title of host publicationRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479985500
DOIs
Publication statusPublished - 11 Dec 2015
Event10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 - Kuala Terengganu, Malaysia
Duration: 19 Aug 201521 Aug 2015

Other

Other10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015
CountryMalaysia
CityKuala Terengganu
Period19/8/1521/8/15

Fingerprint

laser annealing
Thermal evaporation
evaporation
Thin films
Wavelength
Lasers
thin films
Annealing
wavelengths
lasers
atomic force microscopy
pulse repetition rate
laser outputs
Pulse repetition rate
Hall effect
roughness
grain size
Energy gap
Surface roughness
Infrared radiation

Keywords

  • AFM
  • FESEM
  • Hall Effect Measurement
  • Nd
  • Thermal Evaporation
  • UV-Vis
  • XRD
  • YAG laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Khan, N. A., Rahman, K. S., Chowdhury, T. H., Sopian, K., Ali, A. M., Alam, M. M., & Amin, N. (2015). Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings [7355005] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2015.7355005

Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation. / Khan, N. A.; Rahman, K. S.; Chowdhury, T. H.; Sopian, Kamaruzzaman; Ali, A. M.; Alam, M. M.; Amin, Nowshad.

RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7355005.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khan, NA, Rahman, KS, Chowdhury, TH, Sopian, K, Ali, AM, Alam, MM & Amin, N 2015, Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation. in RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings., 7355005, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015, Kuala Terengganu, Malaysia, 19/8/15. https://doi.org/10.1109/RSM.2015.7355005
Khan NA, Rahman KS, Chowdhury TH, Sopian K, Ali AM, Alam MM et al. Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7355005 https://doi.org/10.1109/RSM.2015.7355005
Khan, N. A. ; Rahman, K. S. ; Chowdhury, T. H. ; Sopian, Kamaruzzaman ; Ali, A. M. ; Alam, M. M. ; Amin, Nowshad. / Influence of laser wavelength variation on the laser annealed CdTe thin films grown by thermal evaporation. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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AU - Ali, A. M.

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N2 - Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UVVis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the 'Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, 'T1' and 'T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.

AB - Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition rate were kept fixed. The analyses were carried out using XRD, AFM, UVVis and Hall Effect Measurement system. XRD showed polycrystalline nature for all the films. AFM revealed that laser annealing didn't change the 'Sq' roughness of the films significantly. The UV-Vis analysis depicted significant changes in band gap for both the laser annealed films, 'T1' and 'T2' on the other hand bulk concentration changed slightly upon laser annealing. FESEM images revealed the change in grain size when laser annealing was done on the CdTe thin films.

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