Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology

Uda Hashim, Abu Hassan Shaari Md Nor, Ibrahim Ahmad, Sahbudin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

The statistical design of experiment technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. Two-level screening experiment with 23 factorial design was used to evaluate three process variables in eight combination runs. The factors were implementation dose of BF2 and Ar, drive-in temperature and drive-in time. The analysis of variance used to analyze the data shows that all main variables are important for arsenic implanted wafer and only drive-in temperature factor is important for boron implanted wafer.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages188-193
Number of pages6
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Sheet resistance
Design of experiments
Analysis of variance (ANOVA)
Arsenic
Boron
Screening
Temperature
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hashim, U., Md Nor, A. H. S., Ahmad, I., Shaari, S., & Yeop Majlis, B. (1998). Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 188-193). Piscataway, NJ, United States: IEEE.

Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. / Hashim, Uda; Md Nor, Abu Hassan Shaari; Ahmad, Ibrahim; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. p. 188-193.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hashim, U, Md Nor, AHS, Ahmad, I, Shaari, S & Yeop Majlis, B 1998, Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 188-193, Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98.
Hashim U, Md Nor AHS, Ahmad I, Shaari S, Yeop Majlis B. Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1998. p. 188-193
Hashim, Uda ; Md Nor, Abu Hassan Shaari ; Ahmad, Ibrahim ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / Influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. pp. 188-193
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