Influence of heat treatment process in In2O3-MWCNTs as photoanode in DSSCs

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Indium oxide-multi-walled carbon nanotubes (In2O3-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In2O3) was carried out by dissolving indium chloride (InCl3) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In2O3-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 1.13 %, 5.5 mA/cm2, 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τeff, it achieved the greatest Deff of 29.67 cm2 s−1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the Jsc and Voc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In2O3-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In2O3-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalIonics
DOIs
Publication statusAccepted/In press - 19 Nov 2015

Fingerprint

heat treatment
solar cells
dyes
Heat treatment
Indium
Annealing
indium oxides
Sol-gel process
annealing
Atomic force microscopy
atomic force microscopy
gels
electron recombination
X ray diffraction
Temperature
Carbon Nanotubes
Oxides
temperature
Electrons
Open circuit voltage

Keywords

  • Efficiency
  • Electron transport
  • InO
  • Morphology
  • Multi-walled carbon nanotubes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Influence of heat treatment process in In2O3-MWCNTs as photoanode in DSSCs. / Mahalingam, S.; Abdullah, Huda; Asshaari, Izamarlina; Shaari, S.; Muchtar, Andanastuti.

In: Ionics, 19.11.2015, p. 1-9.

Research output: Contribution to journalArticle

@article{97aed6ff35c94ca3a6741f18329d9da1,
title = "Influence of heat treatment process in In2O3-MWCNTs as photoanode in DSSCs",
abstract = "Indium oxide-multi-walled carbon nanotubes (In2O3-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In2O3) was carried out by dissolving indium chloride (InCl3) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In2O3-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 1.13 {\%}, 5.5 mA/cm2, 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τeff, it achieved the greatest Deff of 29.67 cm2 s−1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the Jsc and Voc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In2O3-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In2O3-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.",
keywords = "Efficiency, Electron transport, InO, Morphology, Multi-walled carbon nanotubes",
author = "S. Mahalingam and Huda Abdullah and Izamarlina Asshaari and S. Shaari and Andanastuti Muchtar",
year = "2015",
month = "11",
day = "19",
doi = "10.1007/s11581-015-1593-x",
language = "English",
pages = "1--9",
journal = "Ionics",
issn = "0947-7047",
publisher = "Institute for Ionics",

}

TY - JOUR

T1 - Influence of heat treatment process in In2O3-MWCNTs as photoanode in DSSCs

AU - Mahalingam, S.

AU - Abdullah, Huda

AU - Asshaari, Izamarlina

AU - Shaari, S.

AU - Muchtar, Andanastuti

PY - 2015/11/19

Y1 - 2015/11/19

N2 - Indium oxide-multi-walled carbon nanotubes (In2O3-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In2O3) was carried out by dissolving indium chloride (InCl3) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In2O3-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 1.13 %, 5.5 mA/cm2, 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τeff, it achieved the greatest Deff of 29.67 cm2 s−1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the Jsc and Voc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In2O3-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In2O3-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.

AB - Indium oxide-multi-walled carbon nanotubes (In2O3-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In2O3) was carried out by dissolving indium chloride (InCl3) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In2O3-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 1.13 %, 5.5 mA/cm2, 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τeff, it achieved the greatest Deff of 29.67 cm2 s−1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the Jsc and Voc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In2O3-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In2O3-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.

KW - Efficiency

KW - Electron transport

KW - InO

KW - Morphology

KW - Multi-walled carbon nanotubes

UR - http://www.scopus.com/inward/record.url?scp=84947547964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947547964&partnerID=8YFLogxK

U2 - 10.1007/s11581-015-1593-x

DO - 10.1007/s11581-015-1593-x

M3 - Article

AN - SCOPUS:84947547964

SP - 1

EP - 9

JO - Ionics

JF - Ionics

SN - 0947-7047

ER -