Influence of gas flow rates on the ZnO thin films formation and it's photoluminescence property

Research output: Contribution to journalArticle

Abstract

Zinc oxide (ZnO) thin films have been grown on p-type Si (100) substrate by thermal evaporation method. The experiment was conducted at 800 °C, under 1.6% O2 with various flow rates namely 500, 1000 and 1500 standard cubic centimeters per minute (sccm) in atmospheric environment. The prepared films were characterized using X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM) equipped with energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) measurement. The aim of this study is to observe the structural and morphology of the growth ZnO film and its PL properties associated with different gas flow rates. The 500 sccm of gas flow rate sample shows strongest intensity NBE UV peaks, which indicates good crystalinity. EDX revealed only Zn and O present in all samples indicating a contaminating free ZnO films were grown. XRD show hat ZnO films synthesized at different gas flow rates were crystalline with hexagonal wurtzite structure in the (101) preferred orientation.

Original languageEnglish
Pages (from-to)279-281
Number of pages3
JournalAdvanced Science Letters
Volume19
Issue number1
DOIs
Publication statusPublished - Jan 2013

Fingerprint

Zinc Oxide
Photoluminescence
Gas Flow
Zinc oxide
gas flow
Flow Rate
Oxide films
Flow of gases
Thin Films
Gases
zinc
Flow rate
oxide
X-Ray Emission Spectrometry
Thin films
X-ray Spectroscopy
X-ray Diffraction
X-Ray Diffraction
X-ray spectroscopy
X ray diffraction

Keywords

  • Gas flow rate
  • Photoluminescence
  • Thermal evaporation
  • Thin film
  • Zinc oxide

ASJC Scopus subject areas

  • Education
  • Health(social science)
  • Mathematics(all)
  • Energy(all)
  • Computer Science(all)
  • Environmental Science(all)
  • Engineering(all)

Cite this

@article{eb96d14f220b47bb894c25c9a04cb18f,
title = "Influence of gas flow rates on the ZnO thin films formation and it's photoluminescence property",
abstract = "Zinc oxide (ZnO) thin films have been grown on p-type Si (100) substrate by thermal evaporation method. The experiment was conducted at 800 °C, under 1.6{\%} O2 with various flow rates namely 500, 1000 and 1500 standard cubic centimeters per minute (sccm) in atmospheric environment. The prepared films were characterized using X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM) equipped with energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) measurement. The aim of this study is to observe the structural and morphology of the growth ZnO film and its PL properties associated with different gas flow rates. The 500 sccm of gas flow rate sample shows strongest intensity NBE UV peaks, which indicates good crystalinity. EDX revealed only Zn and O present in all samples indicating a contaminating free ZnO films were grown. XRD show hat ZnO films synthesized at different gas flow rates were crystalline with hexagonal wurtzite structure in the (101) preferred orientation.",
keywords = "Gas flow rate, Photoluminescence, Thermal evaporation, Thin film, Zinc oxide",
author = "Karkeng Lim and {Abdul Hamid}, {Muhammad Azmi} and Roslinda Shamsudin and {Jalar @ Jalil}, Azman",
year = "2013",
month = "1",
doi = "10.1166/asl.2013.4717",
language = "English",
volume = "19",
pages = "279--281",
journal = "Advanced Science Letters",
issn = "1936-6612",
publisher = "American Scientific Publishers",
number = "1",

}

TY - JOUR

T1 - Influence of gas flow rates on the ZnO thin films formation and it's photoluminescence property

AU - Lim, Karkeng

AU - Abdul Hamid, Muhammad Azmi

AU - Shamsudin, Roslinda

AU - Jalar @ Jalil, Azman

PY - 2013/1

Y1 - 2013/1

N2 - Zinc oxide (ZnO) thin films have been grown on p-type Si (100) substrate by thermal evaporation method. The experiment was conducted at 800 °C, under 1.6% O2 with various flow rates namely 500, 1000 and 1500 standard cubic centimeters per minute (sccm) in atmospheric environment. The prepared films were characterized using X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM) equipped with energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) measurement. The aim of this study is to observe the structural and morphology of the growth ZnO film and its PL properties associated with different gas flow rates. The 500 sccm of gas flow rate sample shows strongest intensity NBE UV peaks, which indicates good crystalinity. EDX revealed only Zn and O present in all samples indicating a contaminating free ZnO films were grown. XRD show hat ZnO films synthesized at different gas flow rates were crystalline with hexagonal wurtzite structure in the (101) preferred orientation.

AB - Zinc oxide (ZnO) thin films have been grown on p-type Si (100) substrate by thermal evaporation method. The experiment was conducted at 800 °C, under 1.6% O2 with various flow rates namely 500, 1000 and 1500 standard cubic centimeters per minute (sccm) in atmospheric environment. The prepared films were characterized using X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM) equipped with energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) measurement. The aim of this study is to observe the structural and morphology of the growth ZnO film and its PL properties associated with different gas flow rates. The 500 sccm of gas flow rate sample shows strongest intensity NBE UV peaks, which indicates good crystalinity. EDX revealed only Zn and O present in all samples indicating a contaminating free ZnO films were grown. XRD show hat ZnO films synthesized at different gas flow rates were crystalline with hexagonal wurtzite structure in the (101) preferred orientation.

KW - Gas flow rate

KW - Photoluminescence

KW - Thermal evaporation

KW - Thin film

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84876885535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876885535&partnerID=8YFLogxK

U2 - 10.1166/asl.2013.4717

DO - 10.1166/asl.2013.4717

M3 - Article

VL - 19

SP - 279

EP - 281

JO - Advanced Science Letters

JF - Advanced Science Letters

SN - 1936-6612

IS - 1

ER -