Influence of deep level defects on the performance of crystalline silicon solar cells: Experimental and simulation study

Adnan Ali, Terence Gouveas, M. A. Hasan, Saleem H. Zaidi, Muhammad Asghar

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Introduction of deep level defects during thermal diffusion of phosphorous (P) in silicon (Si) using spin-on-doping (SOD) from phosphosilicate glass (PSG) was studied using deep level transient spectroscopy (DLTS). The structure was utilized as a solar cell and defect-induced-degradation of the cell efficiency was studied and modeled. The light currentvoltage (LIV) measurements performed on as-fabricated solar cell yielded open circuit voltage, short-circuit current density, fill factor (FF) and efficiency to be 540 mV, 24 mA/cm2, 40% and 5%, respectively. Whilst the simulation of the similar solar cell using AFORS-HET software revealed significantly higher data than the experimental ones. However, by including three deep level defects H1H3 (holes) having activation energies (eV) 0.23, 0.33 and 0.41 in the modeled solar cell, the simulated results were observed in remarkably good agreement with experimental data. Our DLTS measurements practically witnessed H 1H3 defect levels in p-layer of the cell.

Original languageEnglish
Pages (from-to)2805-2810
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume95
Issue number10
DOIs
Publication statusPublished - Oct 2011
Externally publishedYes

Fingerprint

Silicon solar cells
Solar cells
Crystalline materials
Defects
Deep level transient spectroscopy
Light measurement
Thermal diffusion
Silicon
Open circuit voltage
Short circuit currents
Current density
Activation energy
Doping (additives)
Degradation
Glass

Keywords

  • AFORS-HET
  • Deep levels defects
  • DLTS
  • Light current voltage
  • Silicon solar cell
  • Spin-on-doping

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Influence of deep level defects on the performance of crystalline silicon solar cells : Experimental and simulation study. / Ali, Adnan; Gouveas, Terence; Hasan, M. A.; Zaidi, Saleem H.; Asghar, Muhammad.

In: Solar Energy Materials and Solar Cells, Vol. 95, No. 10, 10.2011, p. 2805-2810.

Research output: Contribution to journalArticle

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