### Abstract

This paper presents a new method in the MEMS phase shifters using inductors and inline MEMS bridges. There is LC serial and parallel configuration in the un-actuated and actuated position respectively. The resonance frequencies due to these configurations causes an increasing in impedance change and then increasing in the phase shift in the K- band frequency range. For a unit cell at 20 GHz the Un-actuated simulation results in a reflection coefficient -26.5dB, an insertion loss of-0.185dB and the phase constant of -23.5 degree. The actuated simulation results in a reflection coefficient -13.5dB, an insertion loss of -0.18dB and the phase constant of -6 degree. The spacing in the proposed structures is S=250e-6. This spacing is smaller than similar phase shifters using only capacitors at 20GHz. Then the governing equations for the impedance, Bragg frequency and the periodic spacing between the bridges are derived.

Original language | English |
---|---|

Title of host publication | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |

Pages | 208-212 |

Number of pages | 5 |

DOIs | |

Publication status | Published - 2006 |

Event | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur Duration: 29 Nov 2006 → 1 Dec 2006 |

### Other

Other | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 |
---|---|

City | Kuala Lumpur |

Period | 29/11/06 → 1/12/06 |

### Fingerprint

### ASJC Scopus subject areas

- Engineering(all)

### Cite this

*IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE*(pp. 208-212). [4266599] https://doi.org/10.1109/SMELEC.2006.381049

**Inductively-tuned K-band distributed MEMS phase shifter.** / Afrang, Saeid; Yeop Majlis, Burhanuddin.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE.*, 4266599, pp. 208-212, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381049

}

TY - GEN

T1 - Inductively-tuned K-band distributed MEMS phase shifter

AU - Afrang, Saeid

AU - Yeop Majlis, Burhanuddin

PY - 2006

Y1 - 2006

N2 - This paper presents a new method in the MEMS phase shifters using inductors and inline MEMS bridges. There is LC serial and parallel configuration in the un-actuated and actuated position respectively. The resonance frequencies due to these configurations causes an increasing in impedance change and then increasing in the phase shift in the K- band frequency range. For a unit cell at 20 GHz the Un-actuated simulation results in a reflection coefficient -26.5dB, an insertion loss of-0.185dB and the phase constant of -23.5 degree. The actuated simulation results in a reflection coefficient -13.5dB, an insertion loss of -0.18dB and the phase constant of -6 degree. The spacing in the proposed structures is S=250e-6. This spacing is smaller than similar phase shifters using only capacitors at 20GHz. Then the governing equations for the impedance, Bragg frequency and the periodic spacing between the bridges are derived.

AB - This paper presents a new method in the MEMS phase shifters using inductors and inline MEMS bridges. There is LC serial and parallel configuration in the un-actuated and actuated position respectively. The resonance frequencies due to these configurations causes an increasing in impedance change and then increasing in the phase shift in the K- band frequency range. For a unit cell at 20 GHz the Un-actuated simulation results in a reflection coefficient -26.5dB, an insertion loss of-0.185dB and the phase constant of -23.5 degree. The actuated simulation results in a reflection coefficient -13.5dB, an insertion loss of -0.18dB and the phase constant of -6 degree. The spacing in the proposed structures is S=250e-6. This spacing is smaller than similar phase shifters using only capacitors at 20GHz. Then the governing equations for the impedance, Bragg frequency and the periodic spacing between the bridges are derived.

UR - http://www.scopus.com/inward/record.url?scp=35148855840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148855840&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.381049

DO - 10.1109/SMELEC.2006.381049

M3 - Conference contribution

SN - 0780397312

SN - 9780780397316

SP - 208

EP - 212

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -