Improvement of white organic light emitting diode performances by an annealing process

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Abstract

White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m2, respectively. The annealing technique at relatively low temperature (50 °C, 100 °C, and 150 °C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 °C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m2 were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.

Original languageEnglish
Pages (from-to)4679-4683
Number of pages5
JournalThin Solid Films
Volume517
Issue number16
DOIs
Publication statusPublished - 30 Jun 2009

Fingerprint

Organic light emitting diodes (OLED)
Luminance
light emitting diodes
Light emission
Doping (additives)
Annealing
Tin oxides
Indium
annealing
Electric potential
brightness
Anodes
indium oxides
Cathodes
tin oxides
Dyes
light emission
electric potential
Color
Aluminum

Keywords

  • 5,6,11,12-tetraphenyl-napthacene
  • Organic light emitting diode (OLED)
  • Poly(9,9-di- n-hexylfluorenyl-2,7-diyl)
  • White emitting devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{156d2f5cf662406e8863f02adcc5a1eb,
title = "Improvement of white organic light emitting diode performances by an annealing process",
abstract = "White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.{\%} rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m2, respectively. The annealing technique at relatively low temperature (50 °C, 100 °C, and 150 °C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 °C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m2 were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.",
keywords = "5,6,11,12-tetraphenyl-napthacene, Organic light emitting diode (OLED), Poly(9,9-di- n-hexylfluorenyl-2,7-diyl), White emitting devices",
author = "Suhaila Sepeai and {Mat Salleh}, Muhamad and Muhammad Yahaya and Akrajas, {Ali Umar}",
year = "2009",
month = "6",
day = "30",
doi = "10.1016/j.tsf.2009.02.140",
language = "English",
volume = "517",
pages = "4679--4683",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "16",

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T1 - Improvement of white organic light emitting diode performances by an annealing process

AU - Sepeai, Suhaila

AU - Mat Salleh, Muhamad

AU - Yahaya, Muhammad

AU - Akrajas, Ali Umar

PY - 2009/6/30

Y1 - 2009/6/30

N2 - White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m2, respectively. The annealing technique at relatively low temperature (50 °C, 100 °C, and 150 °C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 °C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m2 were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.

AB - White organic light emitting diode (OLED) devices with the structure ITO/PHF:rubrene/Al, in which PHF (poly(9,9-di-n-hexylfluorenyl-2,7-diyl)) is used as blue light emitting host and rubrene (5,6,11,12-tetraphenylnapthacene) as an orange dye dopant, have been fabricated. Indium tin oxide (ITO) coated-glass and aluminium were used as anode and cathode, respectively. The devices were fabricated with various rubrene-dopant to obtain a white light emission. The OLED device that composed of several concentrations of rubrene-doped PHF film was prepared in this study. It was found that the concentration of rubrene in the PHF-rubrene thin film matrix plays a key role in producing the white color emission. In a typical result, the device composed of 0.06 wt.% rubrene-dopant produced the white light emission with the Commission Internationale de L'Eclairage (CIE) coordinate of (0.30,0.33). The turn-on voltage and the brightness were found to be as low as 14.0 V and as high as 6540 cd/m2, respectively. The annealing technique at relatively low temperature (50 °C, 100 °C, and 150 °C) was then used to optimize the performance of the device. In a typical result, the turn-on voltage of the device could be successfully reduced and the brightness could be increased using the annealing technique. At an optimum condition, for example, annealed at 150 °C, the turn-on voltage as low as 8.0 V and the brightness as high as 9040 cd/m2 were obtained. The mechanism for the improvement of the device performance upon annealing will be discussed.

KW - 5,6,11,12-tetraphenyl-napthacene

KW - Organic light emitting diode (OLED)

KW - Poly(9,9-di- n-hexylfluorenyl-2,7-diyl)

KW - White emitting devices

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U2 - 10.1016/j.tsf.2009.02.140

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SN - 0040-6090

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