Implementation of Sense Amplifier in 0.18-μm CMOS process

L. F. Rahman, Md. Mamun Ibne Reaz, M. A M Ali, M. Marufuzzaman

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Sense Amplifier is one of the major circuits in CMOS nonvolatile memories. The aim of this research is to implement Sense Amplifier in 0.18μm CMOS process to achieve both the lower reading power and superior reliability for sensing operation. In RFID transponder, EEPROM are used to store data. Memory access time, power dissipation and the reliability of an EEPROM is vigorously influenced by the features of the SA. Current type SA experience the larger current or power dissipation problems, which is not suitable for low voltage applications of RFID transponder. The proposed voltage-type SA is able to execute under a very low power supply voltage (VDD) between 1V to 2.6V VDD. The SA circuit implemented within the temperature range from-25°C to 125°C. The compact layout design has been carried out to evaluate the efficiency of the circuit. The modified low voltage-type SA is appropriate for low-voltage applications like RFID EEPROM. Ill. 5, bibl. 10, tabl. 1 (in English; abstracts in English and Lithuanian).

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalElektronika ir Elektrotechnika
Issue number4
Publication statusPublished - Apr 2012

Fingerprint

Radio frequency identification (RFID)
Electric potential
Transponders
Networks (circuits)
Energy dissipation
Data storage equipment
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Rahman, L. F., Ibne Reaz, M. M., Ali, M. A. M., & Marufuzzaman, M. (2012). Implementation of Sense Amplifier in 0.18-μm CMOS process. Elektronika ir Elektrotechnika, (4), 113-116.

Implementation of Sense Amplifier in 0.18-μm CMOS process. / Rahman, L. F.; Ibne Reaz, Md. Mamun; Ali, M. A M; Marufuzzaman, M.

In: Elektronika ir Elektrotechnika, No. 4, 04.2012, p. 113-116.

Research output: Contribution to journalArticle

Rahman, LF, Ibne Reaz, MM, Ali, MAM & Marufuzzaman, M 2012, 'Implementation of Sense Amplifier in 0.18-μm CMOS process', Elektronika ir Elektrotechnika, no. 4, pp. 113-116.
Rahman, L. F. ; Ibne Reaz, Md. Mamun ; Ali, M. A M ; Marufuzzaman, M. / Implementation of Sense Amplifier in 0.18-μm CMOS process. In: Elektronika ir Elektrotechnika. 2012 ; No. 4. pp. 113-116.
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