Abstract
Radio Frequency Identification (RFID) has become an important wireless data communication tool in recent years. As much as we want to ensure data integrity and the robustness of the RFID transponder, Electrostatic Discharge (ESD) influence on the transponder can jeopardize it. Current practice put the ESD protection in the package. However at pad level, the ESD protection is usually small dimensioned to reduce input capacitance. Hence extra ESD protection co-constructed at internal circuit VDD-VSS rail is necessary in advanced process due to thinner gate oxide. In this paper, we have developed an internal ESD protection circuit and implemented it in our previously developed 13.56MHz RFID transponder employing TSMC 0.18μm process. The circuit has a capability to sustain 2-KV of HBM positive mode ESD voltage, which is suitable for RFID applications. The additional power consumption for the clamp circuit is only 15.12nW.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
| Pages | 901-905 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur Duration: 29 Nov 2006 → 1 Dec 2006 |
Other
| Other | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 |
|---|---|
| City | Kuala Lumpur |
| Period | 29/11/06 → 1/12/06 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Implementation of internal mixed signal ESD protection onto RFLD transponder IC. / Khaw, M. K.; Mohd-Yasin, F.; Teh, Y. K.; Ibne Reaz, Md. Mamun.
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 901-905 4266752.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Implementation of internal mixed signal ESD protection onto RFLD transponder IC
AU - Khaw, M. K.
AU - Mohd-Yasin, F.
AU - Teh, Y. K.
AU - Ibne Reaz, Md. Mamun
PY - 2006
Y1 - 2006
N2 - Radio Frequency Identification (RFID) has become an important wireless data communication tool in recent years. As much as we want to ensure data integrity and the robustness of the RFID transponder, Electrostatic Discharge (ESD) influence on the transponder can jeopardize it. Current practice put the ESD protection in the package. However at pad level, the ESD protection is usually small dimensioned to reduce input capacitance. Hence extra ESD protection co-constructed at internal circuit VDD-VSS rail is necessary in advanced process due to thinner gate oxide. In this paper, we have developed an internal ESD protection circuit and implemented it in our previously developed 13.56MHz RFID transponder employing TSMC 0.18μm process. The circuit has a capability to sustain 2-KV of HBM positive mode ESD voltage, which is suitable for RFID applications. The additional power consumption for the clamp circuit is only 15.12nW.
AB - Radio Frequency Identification (RFID) has become an important wireless data communication tool in recent years. As much as we want to ensure data integrity and the robustness of the RFID transponder, Electrostatic Discharge (ESD) influence on the transponder can jeopardize it. Current practice put the ESD protection in the package. However at pad level, the ESD protection is usually small dimensioned to reduce input capacitance. Hence extra ESD protection co-constructed at internal circuit VDD-VSS rail is necessary in advanced process due to thinner gate oxide. In this paper, we have developed an internal ESD protection circuit and implemented it in our previously developed 13.56MHz RFID transponder employing TSMC 0.18μm process. The circuit has a capability to sustain 2-KV of HBM positive mode ESD voltage, which is suitable for RFID applications. The additional power consumption for the clamp circuit is only 15.12nW.
UR - http://www.scopus.com/inward/record.url?scp=35148893672&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35148893672&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2006.380769
DO - 10.1109/SMELEC.2006.380769
M3 - Conference contribution
AN - SCOPUS:35148893672
SN - 0780397312
SN - 9780780397316
SP - 901
EP - 905
BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
ER -