Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

J. Franco, B. Kaczer, M. Toledano-Luque, Ph J. Roussel, J. Mitard, L. Å Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, Muhammad Faiz Bukhori, T. Grasser, A. Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

59 Citations (Scopus)

Abstract

We report extensive statistical NBTI reliability measurements of nanoscaled FETs of different technologies, based on which we propose a 1/area scaling rule for the statistical impact of individual charged gate oxide defects on the electrical characteristic of deeply scaled transistors. Among the considered technologies, nanoscaled SiGe channel devices show smallest time-dependent variability. Furthermore, we report comprehensive measurements of the impact of individual trapped charges on the entire FET ID-VG characteristic. Comparing with 3D atomistic device simulations, we identify several characteristic behaviors depending on the interplay between the location of the oxide defect and the underlying random dopant distribution.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA
Duration: 15 Apr 201219 Apr 2012

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CityAnaheim, CA
Period15/4/1219/4/12

Fingerprint

Field effect transistors
Defects
Oxides
Transistors
Doping (additives)
Negative bias temperature instability

Keywords

  • finFET
  • Nanoscale
  • Negative Bias Temperature Instability
  • pMOSFETs
  • SiGe
  • Time-Dependent Variability

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Mitard, J., Ragnarsson, L. Å., ... Asenov, A. (2012). Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. In IEEE International Reliability Physics Symposium Proceedings [6241841] https://doi.org/10.1109/IRPS.2012.6241841

Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. / Franco, J.; Kaczer, B.; Toledano-Luque, M.; Roussel, Ph J.; Mitard, J.; Ragnarsson, L. Å; Witters, L.; Chiarella, T.; Togo, M.; Horiguchi, N.; Groeseneken, G.; Bukhori, Muhammad Faiz; Grasser, T.; Asenov, A.

IEEE International Reliability Physics Symposium Proceedings. 2012. 6241841.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Franco, J, Kaczer, B, Toledano-Luque, M, Roussel, PJ, Mitard, J, Ragnarsson, LÅ, Witters, L, Chiarella, T, Togo, M, Horiguchi, N, Groeseneken, G, Bukhori, MF, Grasser, T & Asenov, A 2012, Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. in IEEE International Reliability Physics Symposium Proceedings., 6241841, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, 15/4/12. https://doi.org/10.1109/IRPS.2012.6241841
Franco J, Kaczer B, Toledano-Luque M, Roussel PJ, Mitard J, Ragnarsson LÅ et al. Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. In IEEE International Reliability Physics Symposium Proceedings. 2012. 6241841 https://doi.org/10.1109/IRPS.2012.6241841
Franco, J. ; Kaczer, B. ; Toledano-Luque, M. ; Roussel, Ph J. ; Mitard, J. ; Ragnarsson, L. Å ; Witters, L. ; Chiarella, T. ; Togo, M. ; Horiguchi, N. ; Groeseneken, G. ; Bukhori, Muhammad Faiz ; Grasser, T. ; Asenov, A. / Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs. IEEE International Reliability Physics Symposium Proceedings. 2012.
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