Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs

Jacopo Franco, Ben Kaczer, Mara Toledano-Luque, Muhammad Faiz Bukhori, Philippe J. Roussel, Tibor Grasser, Asen Asenov, Guido Groeseneken

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The measurement of the entire I D-V G characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The I D-V G behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel.

Original languageEnglish
Article number6196171
Pages (from-to)779-781
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number6
DOIs
Publication statusPublished - 2012

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Field effect transistors
Oxides
Defects

Keywords

  • Nanoscale
  • negative bias temperature instability (NBTI)
  • pMOSFET
  • reliability
  • time-dependent variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, P. J., Grasser, T., ... Groeseneken, G. (2012). Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs. IEEE Electron Device Letters, 33(6), 779-781. [6196171]. https://doi.org/10.1109/LED.2012.2192410

Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs. / Franco, Jacopo; Kaczer, Ben; Toledano-Luque, Mara; Bukhori, Muhammad Faiz; Roussel, Philippe J.; Grasser, Tibor; Asenov, Asen; Groeseneken, Guido.

In: IEEE Electron Device Letters, Vol. 33, No. 6, 6196171, 2012, p. 779-781.

Research output: Contribution to journalArticle

Franco, J, Kaczer, B, Toledano-Luque, M, Bukhori, MF, Roussel, PJ, Grasser, T, Asenov, A & Groeseneken, G 2012, 'Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs', IEEE Electron Device Letters, vol. 33, no. 6, 6196171, pp. 779-781. https://doi.org/10.1109/LED.2012.2192410
Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, Mara ; Bukhori, Muhammad Faiz ; Roussel, Philippe J. ; Grasser, Tibor ; Asenov, Asen ; Groeseneken, Guido. / Impact of individual charged gate-oxide defects on the entire I D-V G characteristic of nanoscaled FETs. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 6. pp. 779-781.
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