Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

H. Hussin, N. Soin, S. Wan Muhamad Hatta, Muhammad Faiz Bukhori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced positive charges based on energy profiling approach. The time exponent of 0.1 is observed in sub-threshold operation modelled based on the Two-Stage NBTI model while time exponent of 0.3 is observed in sub-threshold operation modelled based energy profiling approach. Considerable threshold voltage shifts are observed during sub-threshold operation based on both defect mechanisms. Extraction of E'centres and E'/Pb H Complex as well as positive charges was found to be temperature dependence hence the degradation is also thermally activated during subthreshold operation for both defect mechanisms.

Original languageEnglish
Title of host publicationIOP Conference Series: Materials Science and Engineering
PublisherInstitute of Physics Publishing
Volume99
Edition1
DOIs
Publication statusPublished - 19 Nov 2015
Event4th International Conference on Electronic Devices, Systems and Applications 2015, ICEDSA 2015 - Kuala Lumpur, Malaysia
Duration: 14 Sep 201515 Sep 2015

Other

Other4th International Conference on Electronic Devices, Systems and Applications 2015, ICEDSA 2015
CountryMalaysia
CityKuala Lumpur
Period14/9/1515/9/15

Fingerprint

Defects
MOSFET devices
Threshold voltage
Degradation
4-nitrobenzylthioinosine
Negative bias temperature instability
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Hussin, H., Soin, N., Muhamad Hatta, S. W., & Bukhori, M. F. (2015). Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET. In IOP Conference Series: Materials Science and Engineering (1 ed., Vol. 99). [012015] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/99/1/012015

Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET. / Hussin, H.; Soin, N.; Muhamad Hatta, S. Wan; Bukhori, Muhammad Faiz.

IOP Conference Series: Materials Science and Engineering. Vol. 99 1. ed. Institute of Physics Publishing, 2015. 012015.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hussin, H, Soin, N, Muhamad Hatta, SW & Bukhori, MF 2015, Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET. in IOP Conference Series: Materials Science and Engineering. 1 edn, vol. 99, 012015, Institute of Physics Publishing, 4th International Conference on Electronic Devices, Systems and Applications 2015, ICEDSA 2015, Kuala Lumpur, Malaysia, 14/9/15. https://doi.org/10.1088/1757-899X/99/1/012015
Hussin H, Soin N, Muhamad Hatta SW, Bukhori MF. Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET. In IOP Conference Series: Materials Science and Engineering. 1 ed. Vol. 99. Institute of Physics Publishing. 2015. 012015 https://doi.org/10.1088/1757-899X/99/1/012015
Hussin, H. ; Soin, N. ; Muhamad Hatta, S. Wan ; Bukhori, Muhammad Faiz. / Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET. IOP Conference Series: Materials Science and Engineering. Vol. 99 1. ed. Institute of Physics Publishing, 2015.
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