Impact of different dose and angle in HALO structure for 45nm NMOS device

F. Salehuddin, I. Ahmad, F. A. Hamid, Azami Zaharim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (V TH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at t ox= 1.1nm.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages6827-6833
Number of pages7
Volume383-390
DOIs
Publication statusPublished - 2012
Event2011 International Conference on Manufacturing Science and Technology, ICMST 2011 - Singapore
Duration: 16 Sep 201118 Sep 2011

Publication series

NameAdvanced Materials Research
Volume383-390
ISSN (Print)10226680

Other

Other2011 International Conference on Manufacturing Science and Technology, ICMST 2011
CitySingapore
Period16/9/1118/9/11

Fingerprint

Growth temperature
Simulators
Threshold voltage
Taguchi methods
Oxides
Design of experiments

Keywords

  • 45nm NMOS
  • Component
  • HALO structure
  • S/D implant
  • Taguchi method
  • TCAD

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Salehuddin, F., Ahmad, I., Hamid, F. A., & Zaharim, A. (2012). Impact of different dose and angle in HALO structure for 45nm NMOS device. In Advanced Materials Research (Vol. 383-390, pp. 6827-6833). (Advanced Materials Research; Vol. 383-390). https://doi.org/10.4028/www.scientific.net/AMR.383-390.6827

Impact of different dose and angle in HALO structure for 45nm NMOS device. / Salehuddin, F.; Ahmad, I.; Hamid, F. A.; Zaharim, Azami.

Advanced Materials Research. Vol. 383-390 2012. p. 6827-6833 (Advanced Materials Research; Vol. 383-390).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Salehuddin, F, Ahmad, I, Hamid, FA & Zaharim, A 2012, Impact of different dose and angle in HALO structure for 45nm NMOS device. in Advanced Materials Research. vol. 383-390, Advanced Materials Research, vol. 383-390, pp. 6827-6833, 2011 International Conference on Manufacturing Science and Technology, ICMST 2011, Singapore, 16/9/11. https://doi.org/10.4028/www.scientific.net/AMR.383-390.6827
Salehuddin F, Ahmad I, Hamid FA, Zaharim A. Impact of different dose and angle in HALO structure for 45nm NMOS device. In Advanced Materials Research. Vol. 383-390. 2012. p. 6827-6833. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.383-390.6827
Salehuddin, F. ; Ahmad, I. ; Hamid, F. A. ; Zaharim, Azami. / Impact of different dose and angle in HALO structure for 45nm NMOS device. Advanced Materials Research. Vol. 383-390 2012. pp. 6827-6833 (Advanced Materials Research).
@inproceedings{a8d3ecb172a8406f970b82603f295173,
title = "Impact of different dose and angle in HALO structure for 45nm NMOS device",
abstract = "In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (V TH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69{\%}), whereas halo implant tilt was the second ranking factor (20{\%}). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6{\%} and 5{\%} respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at t ox= 1.1nm.",
keywords = "45nm NMOS, Component, HALO structure, S/D implant, Taguchi method, TCAD",
author = "F. Salehuddin and I. Ahmad and Hamid, {F. A.} and Azami Zaharim",
year = "2012",
doi = "10.4028/www.scientific.net/AMR.383-390.6827",
language = "English",
isbn = "9783037852958",
volume = "383-390",
series = "Advanced Materials Research",
pages = "6827--6833",
booktitle = "Advanced Materials Research",

}

TY - GEN

T1 - Impact of different dose and angle in HALO structure for 45nm NMOS device

AU - Salehuddin, F.

AU - Ahmad, I.

AU - Hamid, F. A.

AU - Zaharim, Azami

PY - 2012

Y1 - 2012

N2 - In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (V TH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at t ox= 1.1nm.

AB - In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (V TH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at t ox= 1.1nm.

KW - 45nm NMOS

KW - Component

KW - HALO structure

KW - S/D implant

KW - Taguchi method

KW - TCAD

UR - http://www.scopus.com/inward/record.url?scp=83755188202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83755188202&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.383-390.6827

DO - 10.4028/www.scientific.net/AMR.383-390.6827

M3 - Conference contribution

AN - SCOPUS:83755188202

SN - 9783037852958

VL - 383-390

T3 - Advanced Materials Research

SP - 6827

EP - 6833

BT - Advanced Materials Research

ER -