Hydrogen gas production for electronic-grade polycrystalline silicon growth

Hashim Ismail, Uda Hashmi, Abang Annuar Ehsan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The production of polycrystalline silicon (poiysilicon) requires several main feedstocks. Poiysilicon is produced by the reaction of trichlorosilane, SiHCI 3, (TCS) with hydrogen, H 2. Trichlorosilane is produced in the TCS plant while hydrogen is produced in in H2 plant. Hydrogen and oxygen can be produced from water using electricity through the process of electrolysis. The purification or rectification of the H 2 gas is typically done by passing an impure H 2 stream over a heated palladium (Pd) alloy. The purity of H 2 is then tested using a laboratory-constructed hydrogen gas purity test method which has been found to be at 99.9%.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages53-56
Number of pages4
Publication statusPublished - 2002
Event2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 - Penang
Duration: 19 Dec 200221 Dec 2002

Other

Other2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002
CityPenang
Period19/12/0221/12/02

Fingerprint

Polysilicon
Hydrogen
Gases
Palladium alloys
Electrolysis
Feedstocks
Purification
Electricity
Oxygen
Water
trichlorosilane

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ismail, H., Hashmi, U., & Ehsan, A. A. (2002). Hydrogen gas production for electronic-grade polycrystalline silicon growth. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 53-56). [1217774]

Hydrogen gas production for electronic-grade polycrystalline silicon growth. / Ismail, Hashim; Hashmi, Uda; Ehsan, Abang Annuar.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 53-56 1217774.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ismail, H, Hashmi, U & Ehsan, AA 2002, Hydrogen gas production for electronic-grade polycrystalline silicon growth. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 1217774, pp. 53-56, 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002, Penang, 19/12/02.
Ismail H, Hashmi U, Ehsan AA. Hydrogen gas production for electronic-grade polycrystalline silicon growth. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 53-56. 1217774
Ismail, Hashim ; Hashmi, Uda ; Ehsan, Abang Annuar. / Hydrogen gas production for electronic-grade polycrystalline silicon growth. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. pp. 53-56
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