Abstract
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.
| Original language | English |
|---|---|
| Article number | 839 |
| Journal | Sensors (Switzerland) |
| Volume | 16 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 7 Jun 2016 |
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Keywords
- Ionic conductivity
- Macroporous materials
- PH sensitivity
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Analytical Chemistry
- Biochemistry
Cite this
High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor. / Al-Hardan, Naif H.; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M.; Jalar @ Jalil, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Keng, Lim Kar; Chiu, Weesiong; Al-Rawi, Hamzah N.
In: Sensors (Switzerland), Vol. 16, No. 6, 839, 07.06.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor
AU - Al-Hardan, Naif H.
AU - Abdul Hamid, Muhammad Azmi
AU - Ahmed, Naser M.
AU - Jalar @ Jalil, Azman
AU - Shamsudin, Roslinda
AU - Othman, Norinsan Kamil
AU - Keng, Lim Kar
AU - Chiu, Weesiong
AU - Al-Rawi, Hamzah N.
PY - 2016/6/7
Y1 - 2016/6/7
N2 - In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.
AB - In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.
KW - Ionic conductivity
KW - Macroporous materials
KW - PH sensitivity
UR - http://www.scopus.com/inward/record.url?scp=84973402056&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84973402056&partnerID=8YFLogxK
U2 - 10.3390/s16060839
DO - 10.3390/s16060839
M3 - Article
AN - SCOPUS:84973402056
VL - 16
JO - Sensors (Switzerland)
JF - Sensors (Switzerland)
SN - 1424-8220
IS - 6
M1 - 839
ER -