High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor

Naif H. Al-Hardan, Muhammad Azmi Abdul Hamid, Naser M. Ahmed, Azman Jalar @ Jalil, Roslinda Shamsudin, Norinsan Kamil Othman, Lim Kar Keng, Weesiong Chiu, Hamzah N. Al-Rawi

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Original languageEnglish
Article number839
JournalSensors (Switzerland)
Volume16
Issue number6
DOIs
Publication statusPublished - 7 Jun 2016

Fingerprint

pH sensors
Gates (transistor)
Porous silicon
Silicon
porous silicon
field effect transistors
sensitivity
sensors
hydrogen ions
Protons
Silicon sensors
Hydrogen
Ions
Pore size
Hysteresis
Buffers
buffers
hysteresis
porosity
Sensors

Keywords

  • Ionic conductivity
  • Macroporous materials
  • PH sensitivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Analytical Chemistry
  • Biochemistry

Cite this

High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor. / Al-Hardan, Naif H.; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M.; Jalar @ Jalil, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Keng, Lim Kar; Chiu, Weesiong; Al-Rawi, Hamzah N.

In: Sensors (Switzerland), Vol. 16, No. 6, 839, 07.06.2016.

Research output: Contribution to journalArticle

@article{ec8dcac83fc748db9ba3e47da91f73e9,
title = "High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor",
abstract = "In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.",
keywords = "Ionic conductivity, Macroporous materials, PH sensitivity",
author = "Al-Hardan, {Naif H.} and {Abdul Hamid}, {Muhammad Azmi} and Ahmed, {Naser M.} and {Jalar @ Jalil}, Azman and Roslinda Shamsudin and Othman, {Norinsan Kamil} and Keng, {Lim Kar} and Weesiong Chiu and Al-Rawi, {Hamzah N.}",
year = "2016",
month = "6",
day = "7",
doi = "10.3390/s16060839",
language = "English",
volume = "16",
journal = "Sensors (Switzerland)",
issn = "1424-8220",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "6",

}

TY - JOUR

T1 - High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor

AU - Al-Hardan, Naif H.

AU - Abdul Hamid, Muhammad Azmi

AU - Ahmed, Naser M.

AU - Jalar @ Jalil, Azman

AU - Shamsudin, Roslinda

AU - Othman, Norinsan Kamil

AU - Keng, Lim Kar

AU - Chiu, Weesiong

AU - Al-Rawi, Hamzah N.

PY - 2016/6/7

Y1 - 2016/6/7

N2 - In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

AB - In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

KW - Ionic conductivity

KW - Macroporous materials

KW - PH sensitivity

UR - http://www.scopus.com/inward/record.url?scp=84973402056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84973402056&partnerID=8YFLogxK

U2 - 10.3390/s16060839

DO - 10.3390/s16060839

M3 - Article

VL - 16

JO - Sensors (Switzerland)

JF - Sensors (Switzerland)

SN - 1424-8220

IS - 6

M1 - 839

ER -