High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering

M. M. Aliyu, S. Hossain, J. Husna, N. Dhar, M. Q. Huda, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents the significant role deposition pressure plays in the deposition of high quality ITO films by RF magnetron sputtering. ITO target was sputtered onto bare sodalime glass under various deposition conditions. Particularly, the deposition pressure was varied against several other parameters, until the best film characteristics were obtained. The deposited films were characterized using FESEM, AFM, XRD, UV-Vis and four-point probe. Results indicate that deposition pressure plays significant role in obtaining good quality films. ITO grains change dramatically with pressure, having lower pressure giving better morphology. In addition, lower pressure also produced films with lower resistivity but lower transmittance and poor crystallinity. By separately and collectively optimizing the deposition conditions, ITO films of 160 - 200nm thickness, having resistivity of 7.56×10-5 Ω-cm with 87% transmittance were obtained. To our knowledge, this is the lowest resistivity ITO films produced by magnetron sputtering. This work confirms that even though deposition temperature and RF power have overbearing influence on the film properties, but the deposition pressure also contributes significantly in obtaining good quality films.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2009-2013
Number of pages5
DOIs
Publication statusPublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX
Duration: 3 Jun 20128 Jun 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CityAustin, TX
Period3/6/128/6/12

Fingerprint

Film growth
Tin oxides
Magnetron sputtering
Indium
Oxide films
Glass

Keywords

  • bandgap
  • ITO
  • pressure
  • resistivity
  • Sputtering
  • transmittance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Aliyu, M. M., Hossain, S., Husna, J., Dhar, N., Huda, M. Q., Sopian, K., & Amin, N. (2012). High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2009-2013). [6317992] https://doi.org/10.1109/PVSC.2012.6317992

High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering. / Aliyu, M. M.; Hossain, S.; Husna, J.; Dhar, N.; Huda, M. Q.; Sopian, Kamaruzzaman; Amin, Nowshad.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2009-2013 6317992.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aliyu, MM, Hossain, S, Husna, J, Dhar, N, Huda, MQ, Sopian, K & Amin, N 2012, High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6317992, pp. 2009-2013, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, 3/6/12. https://doi.org/10.1109/PVSC.2012.6317992
Aliyu MM, Hossain S, Husna J, Dhar N, Huda MQ, Sopian K et al. High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 2009-2013. 6317992 https://doi.org/10.1109/PVSC.2012.6317992
Aliyu, M. M. ; Hossain, S. ; Husna, J. ; Dhar, N. ; Huda, M. Q. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / High quality indium tin oxide (ITO) film growth by controlling pressure in RF magnetron sputtering. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 2009-2013
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