High-precision thickness control of silicon membranes using etching techniques

Mohsen Nabipoor, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A visual method is demonstrated for fabrication of silicon membranes by deep reactive ion etching (DRIE) and wet etching techniques. A DRIE cavity is created on silicon substrate closed to the membrane recess, and the backside of the wafer is etched by a wet etching process until it reaches the bottom of the DRIE cavity. Both isotropic and anisotropic wet etching with a loose control of temperature and concentration could be used. Because of the high accuracy etch rate of the silicon by DRIE, the depth of the cavity could be defined accurately and the fabricated membrane thickness would be precise.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages185-187
Number of pages3
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Thickness control
Reactive ion etching
Wet etching
Etching
Membranes
Silicon
Anisotropic etching
Fabrication
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nabipoor, M., & Yeop Majlis, B. (2006). High-precision thickness control of silicon membranes using etching techniques. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 185-187). [4266594] https://doi.org/10.1109/SMELEC.2006.381044

High-precision thickness control of silicon membranes using etching techniques. / Nabipoor, Mohsen; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 185-187 4266594.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nabipoor, M & Yeop Majlis, B 2006, High-precision thickness control of silicon membranes using etching techniques. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266594, pp. 185-187, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381044
Nabipoor M, Yeop Majlis B. High-precision thickness control of silicon membranes using etching techniques. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 185-187. 4266594 https://doi.org/10.1109/SMELEC.2006.381044
Nabipoor, Mohsen ; Yeop Majlis, Burhanuddin. / High-precision thickness control of silicon membranes using etching techniques. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 185-187
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