High performance silicon lateral PIN photodiode

S. Kalthom Tasirin, P. Susthitha Menon N V Visvanathan, Ibrahim Ahmad, S. Fazlili Abdullah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm 2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.

Original languageEnglish
Title of host publicationIOP Conference Series: Earth and Environmental Science
PublisherInstitute of Physics Publishing
Volume16
Edition1
DOIs
Publication statusPublished - 2013
Event26th IAHR Symposium on Hydraulic Machinery and Systems - Beijing, China
Duration: 19 Aug 201223 Aug 2012

Other

Other26th IAHR Symposium on Hydraulic Machinery and Systems
CountryChina
CityBeijing
Period19/8/1223/8/12

Fingerprint

fiber optics
silicon
wavelength
communications system
speed
parameter

ASJC Scopus subject areas

  • Earth and Planetary Sciences(all)
  • Environmental Science(all)

Cite this

Tasirin, S. K., N V Visvanathan, P. S. M., Ahmad, I., & Abdullah, S. F. (2013). High performance silicon lateral PIN photodiode. In IOP Conference Series: Earth and Environmental Science (1 ed., Vol. 16). [012032] Institute of Physics Publishing. https://doi.org/10.1088/1755-1315/16/1/012032

High performance silicon lateral PIN photodiode. / Tasirin, S. Kalthom; N V Visvanathan, P. Susthitha Menon; Ahmad, Ibrahim; Abdullah, S. Fazlili.

IOP Conference Series: Earth and Environmental Science. Vol. 16 1. ed. Institute of Physics Publishing, 2013. 012032.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tasirin, SK, N V Visvanathan, PSM, Ahmad, I & Abdullah, SF 2013, High performance silicon lateral PIN photodiode. in IOP Conference Series: Earth and Environmental Science. 1 edn, vol. 16, 012032, Institute of Physics Publishing, 26th IAHR Symposium on Hydraulic Machinery and Systems, Beijing, China, 19/8/12. https://doi.org/10.1088/1755-1315/16/1/012032
Tasirin SK, N V Visvanathan PSM, Ahmad I, Abdullah SF. High performance silicon lateral PIN photodiode. In IOP Conference Series: Earth and Environmental Science. 1 ed. Vol. 16. Institute of Physics Publishing. 2013. 012032 https://doi.org/10.1088/1755-1315/16/1/012032
Tasirin, S. Kalthom ; N V Visvanathan, P. Susthitha Menon ; Ahmad, Ibrahim ; Abdullah, S. Fazlili. / High performance silicon lateral PIN photodiode. IOP Conference Series: Earth and Environmental Science. Vol. 16 1. ed. Institute of Physics Publishing, 2013.
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AB - Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm 2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode.

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