Heteroepitaxial growth on microscale patterned silicon structures

G. Vanamu, A. K. Datye, Saleem H. Zaidi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This work is aimed at finding the effect of the patterned size on the quality of the heteroepitaxial growth. We have analyzed heteroepitaxial growth of Ge/SixGe1-x layers on variable duty cycle microscale-patterned Si substrates. These mesa patterns were fabricated using optical lithography, reactive ion and wet-chemical etching techniques. For reference, the quality of the growth on the patterned substrates was compared to that on planar substrates under identical conditions. The quality of the Ge epilayers was evaluated by using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution X-ray diffraction (HRXRD), and etch pit density (EPD) measurements. Using TEM and X-ray measurements we determined that the defect density is reduced as the size of the posts decreased from 20 to 4 μm, while keeping the center to center distance between the posts constant at 25 μm. The dislocation density obtained for Ge/SixGe1-x on the planar, the smallest patterned and the largest patterned structures were 6×108, 4×107 and 2×108 cm-2, respectively. The typical crosshatch pattern present in the planar samples is not present in the patterned samples.

Original languageEnglish
Pages (from-to)66-74
Number of pages9
JournalJournal of Crystal Growth
Volume280
Issue number1-2
DOIs
Publication statusPublished - 15 Jun 2005
Externally publishedYes

Fingerprint

Silicon
Epitaxial growth
microbalances
silicon
Substrates
transmission electron microscopy
Wet etching
Epilayers
Defect density
mesas
Photolithography
High resolution transmission electron microscopy
x rays
lithography
etching
Ions
Transmission electron microscopy
X ray diffraction
X rays
Scanning electron microscopy

Keywords

  • A1. Characterization
  • A1. High-resolution X-ray diffraction
  • A3. Chemical vapor deposition
  • A3. Selective epitaxy
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Heteroepitaxial growth on microscale patterned silicon structures. / Vanamu, G.; Datye, A. K.; Zaidi, Saleem H.

In: Journal of Crystal Growth, Vol. 280, No. 1-2, 15.06.2005, p. 66-74.

Research output: Contribution to journalArticle

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