Pertumbuhan epitaksi filem Si-Ge menggunakan kaedah evaporasi vakum diatas silikon berstruktur nano

Translated title of the contribution: Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates

Research output: Contribution to journalArticle

Abstract

In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications.

Original languageMalay
Pages (from-to)1229-1242
Number of pages14
JournalMalaysian Journal of Analytical Sciences
Volume19
Issue number6
Publication statusPublished - 2015

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Silicon
Epitaxial growth
Vacuum
Infrared spectroscopy
Substrates
Field emission
Optoelectronic devices
Raman spectroscopy
Etching
Optics
Solar cells
Energy gap
Metals
Annealing
X rays
Scanning electron microscopy
Catalysts
Costs

ASJC Scopus subject areas

  • Analytical Chemistry

Cite this

@article{28833f87abe14c85bb77f16fc8259b87,
title = "Pertumbuhan epitaksi filem Si-Ge menggunakan kaedah evaporasi vakum diatas silikon berstruktur nano",
abstract = "In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications.",
keywords = "Heteroepitaxial growth, Metal assisted chemical etching, Nanostructured Si, Silicon germanium, Thermal evaporation",
author = "Azhari, {Ayu Wazira} and Kamaruzzaman Sopian and Zaidi, {Saleem H.}",
year = "2015",
language = "Malay",
volume = "19",
pages = "1229--1242",
journal = "Malaysian Journal of Analytical Sciences",
issn = "1394-2506",
publisher = "Faculty of Science and Technology, Universiti Kebangsaan Malaysia",
number = "6",

}

TY - JOUR

T1 - Pertumbuhan epitaksi filem Si-Ge menggunakan kaedah evaporasi vakum diatas silikon berstruktur nano

AU - Azhari, Ayu Wazira

AU - Sopian, Kamaruzzaman

AU - Zaidi, Saleem H.

PY - 2015

Y1 - 2015

N2 - In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications.

AB - In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications.

KW - Heteroepitaxial growth

KW - Metal assisted chemical etching

KW - Nanostructured Si

KW - Silicon germanium

KW - Thermal evaporation

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EP - 1242

JO - Malaysian Journal of Analytical Sciences

JF - Malaysian Journal of Analytical Sciences

SN - 1394-2506

IS - 6

ER -