Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures

Ganesh Vanamu, Abhaya K. Datye, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We describe novel 2-D structures that facilitate strain relief and allow us to obtain Ge epilayers that are free of defects. These structures can potentially absorb thermal expansion and lattice expansion mismatch as well as enable liftoff of heteroepitaxial layers for subsequent wafer reuse. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 2-D patterns of silicon posts. The dimensions of the posts were varied keeping the pitch (center to center distance) constant. Heteroepitaxial growth of Ge/Si xGe 1-x on these micrometer-scale structures was investigated. While, keeping the growth parameters constant, the geometry of the structures was varied to determine the optimum configuration for the highest quality heteroepitaxial growth. The quality of the Si 1-xGe x, buffer system was investigated using high-resolution x-ray diffraction. Transmission electron microscopy (TEM) was used to analyze the epilayer cross-sections. Surface morphology was analyzed using scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical microscopy. Our results show that the quality of the heteroepitaxial layers improves as the width of the posts in the 2-D pattern was decreased.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM. Caymax, K. Rim, S. Zaima, E. Kasper, P.F.P. Fichtner
Pages121-126
Number of pages6
Volume809
Publication statusPublished - 2004
Externally publishedYes
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: 13 Apr 200415 Apr 2004

Other

OtherHigh-Mobility Group-IV Materials and Devices
CountryUnited States
CitySan Francisco, CA
Period13/4/0415/4/04

Fingerprint

Epilayers
Silicon
Epitaxial growth
Wet etching
Lithography
Optical microscopy
Thermal expansion
Surface morphology
Atomic force microscopy
Buffers
Diffraction
Ions
Transmission electron microscopy
X rays
Defects
Scanning electron microscopy
Geometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vanamu, G., Datye, A. K., & Zaidi, S. H. (2004). Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures In M. Caymax, K. Rim, S. Zaima, E. Kasper, & P. F. P. Fichtner (Eds.), Materials Research Society Symposium Proceedings (Vol. 809, pp. 121-126)

Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures . / Vanamu, Ganesh; Datye, Abhaya K.; Zaidi, Saleem H.

Materials Research Society Symposium Proceedings. ed. / M. Caymax; K. Rim; S. Zaima; E. Kasper; P.F.P. Fichtner. Vol. 809 2004. p. 121-126.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vanamu, G, Datye, AK & Zaidi, SH 2004, Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures in M Caymax, K Rim, S Zaima, E Kasper & PFP Fichtner (eds), Materials Research Society Symposium Proceedings. vol. 809, pp. 121-126, High-Mobility Group-IV Materials and Devices, San Francisco, CA, United States, 13/4/04.
Vanamu G, Datye AK, Zaidi SH. Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures In Caymax M, Rim K, Zaima S, Kasper E, Fichtner PFP, editors, Materials Research Society Symposium Proceedings. Vol. 809. 2004. p. 121-126
Vanamu, Ganesh ; Datye, Abhaya K. ; Zaidi, Saleem H. / Heteroepitaxial growth and characterization of Ge and Si xGe 1-x films on patterned silicon structures Materials Research Society Symposium Proceedings. editor / M. Caymax ; K. Rim ; S. Zaima ; E. Kasper ; P.F.P. Fichtner. Vol. 809 2004. pp. 121-126
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