Growth optimization of ZnS thin films by RF magnetron sputtering as prospective buffer layer in thin film solar cells

F. Haque, K. S. Rahman, M. A. Islam, M. J. Rashid, Md. Akhtaruzzaman, M. M. Alam, Z. A. Alothman, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

ZnS thin films were grown on soda lime glass substrates by RF Magnetron sputtering technique at room temperature. Deposited films were annealed at 300°C, 400°C & 500°C for 40 minutes, respectively. A comparative study of the structural, optical and electrical properties of the as-deposited and annealed samples was executed through XRD, AFM, UV-VIS spectrometry and Hall Effect measurement. From XRD, it has been found that the as-deposited films are amorphous in nature, whereas the significant peaks of the annealed samples reflects better crystallinity with (111) preferential orientation around 2θ=28.88°. The surface roughness of the films is also highly affected by the annealing temperature as observed from the AFM images. The optical properties of the films were ascertained for the photon wavelength ranging from 300 to 900 nm. The bandgaps of the films were found in the range of 3.19 eV to 3.29 eV. From the electrical characterization, bulk carrier density is found to be in the range of 1012/cm3. The values of resistivity, mobility, Hall coefficient of the films are found to change significantly for different annealing temperatures.

Original languageEnglish
Pages (from-to)189-197
Number of pages9
JournalChalcogenide Letters
Volume11
Issue number4
Publication statusPublished - 2014

Fingerprint

Buffer layers
Magnetron sputtering
magnetron sputtering
buffers
solar cells
Thin films
optimization
thin films
Optical properties
Hall effect
Annealing
Hall mobility
atomic force microscopy
optical properties
Amorphous films
annealing
Lime
Temperature
Spectrometry
calcium oxides

Keywords

  • AFM
  • Annealing
  • Hall Effect measurement
  • Magnetron sputtering
  • Optical bandgap
  • XRD
  • ZnS thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Haque, F., Rahman, K. S., Islam, M. A., Rashid, M. J., Akhtaruzzaman, M., Alam, M. M., ... Amin, N. (2014). Growth optimization of ZnS thin films by RF magnetron sputtering as prospective buffer layer in thin film solar cells. Chalcogenide Letters, 11(4), 189-197.

Growth optimization of ZnS thin films by RF magnetron sputtering as prospective buffer layer in thin film solar cells. / Haque, F.; Rahman, K. S.; Islam, M. A.; Rashid, M. J.; Akhtaruzzaman, Md.; Alam, M. M.; Alothman, Z. A.; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Chalcogenide Letters, Vol. 11, No. 4, 2014, p. 189-197.

Research output: Contribution to journalArticle

Haque, F, Rahman, KS, Islam, MA, Rashid, MJ, Akhtaruzzaman, M, Alam, MM, Alothman, ZA, Sopian, K & Amin, N 2014, 'Growth optimization of ZnS thin films by RF magnetron sputtering as prospective buffer layer in thin film solar cells', Chalcogenide Letters, vol. 11, no. 4, pp. 189-197.
Haque, F. ; Rahman, K. S. ; Islam, M. A. ; Rashid, M. J. ; Akhtaruzzaman, Md. ; Alam, M. M. ; Alothman, Z. A. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Growth optimization of ZnS thin films by RF magnetron sputtering as prospective buffer layer in thin film solar cells. In: Chalcogenide Letters. 2014 ; Vol. 11, No. 4. pp. 189-197.
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